BA891 Datasheet, PDF (1/2 Pages) NXP Semiconductors – Band-switching diode

LESHAN RADIO COMPANY, LTD.
Band-switching diode
FEATURES
· Ultra small plastic SMD package
· Low diode capacitance: max. 1.05 pF
· Low diode forward resistance: max. 0.7 Ω
· Small inductance.
APPLICATIONS
· Low loss band-switching in VHF television tuners
· Surface mount band-switching circuits.
DESCRIPTION
The BA891 is a planar, high performance band-switching diode in the ultra small
SOD523 SMD plastic package.
1
CATHODE
2
ANODE
BA 891
1
2
SOD523 SC-79
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VR
I
IF
P tot
T stg
Tj
PARAMETER
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
junction temperature
CONDITIONS
T s =90°C
MIN.
–
–
–
-65
-65
MAX.
35
100
715
+150
+150
UNIT
V
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS T j = 25°C unless otherwise specified.
SYMBOL PARAMETER
CONDITIONS
V_F
forward voltage
IR
reverse current
C d diode capacitance
r D diode forward resistance
LS
Note
series inductance
I F =10 mA
V R =30 V
f = 1 MHz; note 1; see Fig.1
V R=1V
V R=3V
f = 100 MHz; note 1; see Fig.2
I F = 3 mA
I F = 10 mA
1. Guaranteed on AQL basis; inspection level S4, AQL 1.0.
TYP.
–
–
MAX.
1
20
UNIT
V
nA
0.8
1.05
pF
0.65
0.9
pF
0.45
0.7
Ω
0.36
0.5
Ω
0.6
-
nH
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to soldering-point
VALUE
85
UNIT
K/W
S21–1/2