BA277 Datasheet, PDF (1/2 Pages) NXP Semiconductors – Band-switching diode

LESHAN RADIO COMPANY, LTD.
Band-switching diode
FEATURES
· Small plastic SMD package
· Continuous reverse voltage: max. 35 V
· Continuous forward current: max. 100 mA
· Low diode capacitance: max. 1.2 pF
· Low diode forward resistance: max. 0.7 Ω.
APPLICATIONS
· Low loss band switching in VHF television tuners.
· Surface mount band-switching circuits.
DESCRIPTION
Planar high performance band-switching diode in a small
plastic SOD523 (SC-79) SMD package.
1
CATHODE
2
ANODE
BA 277
1
2
SOD523 SC-79
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VR
IF
P tot
T stg
Tj
PARAMETER
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
junction temperature
CONDITIONS
Ts =90°C
MIN.
–
–
–
-65
-65
MAX.
35
100
715
+150
+150
UNIT
V
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS T j = 25°C unless otherwise specified.
SYMBOL PARAMETER
CONDITIONS
VF
forward voltage
I F =10 mA
IR
reverse current
V R = 25 V
V R = 20 V; T amb =75°C
C d diode capacitance
f = 1 MHz; V R = 6 V; note 1; see Fig.1
r D diode forward resistance I F = 2 mA; f = 100 MHz; note 1; see Fig.2
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
MAX.
1
50
1
1.2
0.7
UNIT
V
nA
µA
pF
Ω
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to soldering-point
VALUE
85
UNIT
K/W
S19–1/2