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| 1SS110 Datasheet, PDF (1/3 Pages) Hitachi Semiconductor – Silicon Epitaxial Planar Diode for Tuner Band Switch | |||
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Switching Diode
*150mW DO-34
* Glass silicon switching diodes
* We declare that the material of product
compliance with RoHS requirements.
1SS110
Product Characteristic
Absolute Maximum Ratings(Ta=25°C)
Type
1SS110
VR(V)
35
IF(mA)
100
Pd(mW)
150
Topr(â)
Tstg(â)
-20~+60 -55~+125
Characteristics at Ta = 25°C
Parameter Symbol
symbol
MIN
TYPE
MAX
Unit
Forward Voltage at IF=100mA
VF
-
-
1.0
V
Leakage Current at VR=25V
IR
-
-
0.1
uA
Breakdown Voltage at IR=10uA
V(BR)R
35
-
-
V
Capacitance at VR = 6V f =1MHZ
CT
-
-
1.2
pF
Forward resistance at IF=2mA f=100MHz
rj
-
-
0.9
â¦
Inductance at f=250MHZ
Ls
-
3
-
nH
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