1N4148 Datasheet, PDF (1/3 Pages) NXP Semiconductors – High-speed diodes

LESHAN RADIO COMPANY, LTD.
SWITCHING DIODES
1.
SWITCHING DIODES
1N4148
1S SERIES
1SS SERIES
ABSOLUTE MAXIMUM RATINGS
TYPE VRM(V)
1N4148 100
1S1553 70
1S1555 35
1SS133 90
1SS176 35
1SS270 30
VR(V)
75
60
30
80
30
30
IF(mA)
450
300
300
400
300
450
IO(mA) I FS(mA)1 Sec P(mw)
150 700 500
100 1000 400
100 1000 400
130 600 300
100 1000
150 1000 300
TJ(°C) Tstg(°C)
175 -65~+175
150 -65~+150
150 -65~+150
175 -65~+175
175 -65~+175
175 -65~+175
Package (mm)
DO-35
DO-34
ELECTRICAL CHARACTERISTICS
TYPE
1N4148
1S1553
1S1555
1SS133
1SS176
1SS270
V_FMAX(v)
@I _F=100mA
1.20
V_(BR)R(v) _Min
@I _R=5 µA @I _R=100µA
75
100
@I F=100mA
1.4
@I F=100mA
1.4
@I F=100mA
1.2
@I F=100mA
1.2
@I F=100mA
0.8
IRMax (µA)
@ V_R=20V
0.025
@ V_R=75V
5
@ V_R=60V
0.5
@ V_R=30V
0.5
@ V_R=80V
0.5
@ V_R=30V
0.5
@ V_R=30V
1
C t (pF)max
@ V_R=0 f =1MHz
4
@ V_R=0 f =1MHz
3.5
@ V_R=0 f =1MHz
3.5
@ V_R=0 f =1MHz
2
@ V_R=0 f =1MHz
3
@ V_R=0 f =1MHz
3
Trr(ns)
VR =6V I F =100mA
R L=100Ω
4
VR =6V I F =100mA
R L=100Ω
4
VR =6V I F =100mA
R L=100Ω
4
VR =6V I F =100mA
R L=100Ω
3.5
Φ 1.8 ± 0.2
Φ 0.5 ± 0.1
29 ± 1
3.8 ± 0.2
DO – 35
(mm)
29 ± 1
29 ± 1
2.7 ± 0.3
29 ± 1
Φ0.4 ± 0.1
Φ1.8 ± 0.02
DO – 34
(mm)
7B–1/3