L9D125G80BG4 Datasheet, PDF (1/45 Pages) LOGIC Devices Incorporated – 2.5 Gb, DDR - SDRAM Integrated Module

PreLIMINARY Information L9D125G80BG4
2.5 Gb, DDR - SDRAM Integrated Module (IMOD)
FEATURES
DDR SDRAM Data Rate = 200, 250,
266, and 333 Mbps
Package:
• 25mm x 25mm, Encapsulated
Plastic Ball Grid array (PBGA), 219
balls, 1.27mm pitch.
2.5V ±0.2V Core Power supply
2.5V ±0.2V I/O Power supply
(SSTL_2 compatible)
Differential Clock inputs (CLKx,
CLKx\)
Commands entered on each positive
CLKx edge
Internal pipelined double-data-
rate (DDR) Architecture; two data
accesses per clock cycle
Programmable Burst Length:
2, 4, or 8
Bidirectional data strobe (DQSLx,
DQsHx) per byte transmitted/
received with data
i.e. source-synchronous data capture
DQS edge-aligned with data for
READ; center-aligned with data for
WRITE
DLL to align DQx and DQSLx,
DQSHx transitions with CLKx
Four internal banks for concurrent
operation
One data mask per byte, IMOD con-
tains (10) bytes
Programmable IOL/IOH Option
Auto PRECHARGE option
Auto REFRESH and SELF
REFRESH Modes
Available in INDUSTRIAL,
EXTENDED and Mil-Temp ranges
Organized as 16M x 72/80
Weight: LOGIC Devices, Inc.
L9D125G80BG4 = 2.75 grams
typical
*Note: This integrated product and/or its specifications are subject to change without notice.
Latest document should be retrieved from LDI prior to your design consideration.
Benefits
53% SPACE savings vs. Monolithic,
TSOPII-66 solution
Reduced I/O routing (34%)
Reduced trace length providing
improved/reduced parasitic capaci-
tance
Impedance matched (60ohm) pack-
aging
High TCE organic laminate inter-
poser
Suitable for High Reliability applica-
tions
MONOLITHIC SOLUTION
IMOD SOLUTION
O
S
P
11.9
11.9
11.9
11.9
11.9
A
T
V
I
25mm
I
O
22.3
N
N
G
S
S
25mm
AREA
I/O
5 X 265mm = 1328mm PLUS
5 X 66 pins = 320 pins total
625mm
53%
219 Balls/Locations
34%
LOGIC Devices Incorporated
www.logicdevices.com
1
High Performance, Integrated Memory Module Product
Feb 2, 2009 LDS-L9D125G80BG4-C