L2004F51TP Datasheet, PDF (4/8 Pages) Littelfuse – Sensitive Triacs

Sensitive Triacs
Data Sheets
I_T(RMS)
(11)
MAX
6A
8A
Isolated
Part No.
Non-isolated
MT2
MT2
G
MT2
MT1
G
MT2
TO-220
MT1
TO-252
D-Pak
MT1
G
MT2
TO-251
V-Pak
See “Package Dimensions” section for variations. (12)
L2006L5
L2006D5
L2006V5
L4006L5
L4006D5
L4006V5
L6006L5
L6006D5
L6006V5
L2006L6
L2006D6
L2006V6
L4006L6
L4006D6
L4006V6
L6006L6
L6006D6
L6006V6
L2006L8
L2006D8
L2006V8
L4006L8
L4006D8
L4006V8
L6006L8
L6006D8
L6006V8
L2008L6
L2008D6
L2008V6
L4008L6
L4008D6
L4008V6
L6008L6
L6008D6
L6008V6
L2008L8
L2008D8
L2008V8
L4008L8
L4008D8
L4008V8
L6008L8
L6008D8
L6008V8
V_DRM
(1)
I_GT
(3) (6)
I_DRM
(1) (14)
Volts
MIN
200
400
600
200
400
600
200
400
600
200
400
600
200
400
600
mAmps
mAmps
QI QII QIII QIV T_C = 25 °C T_C = 110 °C
MAX
MAX
5
5
5
5
0.02
0.5
5
5
5
5
0.02
0.5
5
5
5
5
0.02
0.5
5
5
5 10
0.02
0.5
5
5
5 10
0.02
0.5
5
5
5 10
0.02
0.5
10 10 10 20
0.02
0.5
10 10 10 20
0.02
0.5
10 10 10 20
0.02
0.5
5
5
5 10
0.02
0.5
5
5
5 10
0.02
0.5
5
5
5 10
0.02
0.5
10 10 10 20
0.02
0.5
10 10 10 20
0.02
0.5
10 10 10 20
0.02
0.5
Specified Test Conditions
di/dt — Maximum rate-of-change of on-state current; I_GT = 50 mA with
0.1 µs rise time
dv/dt — Critical rate-of-rise of off-state voltage at rated V_DRM gate open
dv/dt(c) — Critical rate-of-rise of commutation voltage at rated V_DRM
and I_T(RMS) commutating di/dt = 0.54 rated I_T(RMS)/ms; gate
unenergized
I²t — RMS surge (non-repetitive) on-state current for period of 8.3 ms
for fusing
I_DRM — Peak off-state current, gate open; V_DRM = max rated value
I_GT — DC gate trigger current in specific operating quadrants;
V_D = 12 V dc; R_L = 60 Ω
I_GTM — Peak gate trigger current
I_H — Holding current gate open; initial on-state current = 100 mA dc
I_T(RMS) — RMS on-state current conduction angle of 360°
I_TSM — Peak one-cycle surge
P_G(AV) — Average gate power dissipation
P_GM — Peak gate power dissipation; I_GT ≤ I_GTM
t_gt — Gate controlled turn-on time; I_GT = 50 mA with 0.1 µs rise time
V_DRM — Repetitive peak off-state/blocking voltage
V_GT — DC gate trigger voltage; V_D = 12 V dc; R_L = 60 Ω
V_TM — Peak on-state voltage at max rated RMS current
General Notes
• All measurements are made with 60 Hz resistive load and at an
ambient temperature of +25 °C unless otherwise specified.
• Operating temperature range (T_J) is -65 °C to +110 °C for TO-92
devices and -40 °C to +110 °C for all other devices.
• Storage temperature range (T_S) is -65 °C to +150 °C for TO-92
devices, -40 °C to +150 °C for TO-202 devices, and -40 °C to
+125 °C for TO-220 devices.
• Lead solder temperature is a maximum of 230 °C for 10 seconds
maximum at a minimum of 1/16” (1.59 mm) from case.
• The case or lead temperature (T_C or T_L) is measured as shown on
dimensional outline drawings. See “Package Dimensions” section
of this catalog.
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©2004 Littelfuse, Inc.
Thyristor Product Catalog