ZEN132V230A16LS Datasheet, PDF (3/9 Pages) Littelfuse – Time delayed, reverse bias trip

PolyZen
Polymer Enhanced Zener Diode
Micro-Assemblies
PRODUCT: ZEN132V230A16LS
DOCUMENT: SCD27362
REV LETTER: D
REV DATE: JULY 26, 2016
PAGE NO.: 3 OF 8
GENERAL SPECIFICATIONS
Operating Temperature
-40º to +85ºC
Storage Temperature
-40º to +85ºC
ELECTRICAL CHARACTERISTICS^{1-3, 11} (Typical unless otherwise specified)
Min
VZ4
(V)
Typ
Izt4
(A)
IHOLD5
@_20ºC
(A)
Max
Leakage Current
Test
Voltage
Max
Current
(mA)
R Typ⁶
(Ohms)
R1Max7
(Ohms)
VInt Max⁸
(V)
VINT
Max
(V)
Test
Current
(A)
IFLT Max⁹
IFLT
Max
(A)
Test
Voltage
(V)
Tripped Power
Dissipation ¹⁰
Max
Value
(W)
Test
Voltage
(V)
13.2 13.4 13.6 0.1 2.3
13.15
5
0.04
0.06 16V
5A
+2 +20
-40 -12V
0.8
20
Note 1: Electrical characteristics determined at 25ºC unless otherwise specified.
Note 2: This device is intended for limited fault protection. Repeated trip events or extended trip endurance can degrade the
device and may affect performance to specifications. Performance impact will depend on multiple factors including,
but not limited to, voltage, trip current, trip duration, trip cycles, and circuit design. For details or ratings specific to
your application contact Littelfuse Connectivity Circuit Protection directly.
Note 3: Specifications developed using 1.0 ounce 0.045” wide copper traces on dedicated FR4 test boards. Performance in
your application may vary.
Note 4: Izt is the current at which Vz is measured (VZ = VOUT). Additional VZ values are available on request.
Note 5: IHOLD: Maximum steady state IPTC (current entering or exiting the VIN pin of the device) that will not generate a trip
event at the specified temperature. Specification assumes IFLT (current flowing through the Zener diode) is sufficiently
low so as to prevent the diode from acting as a heat source. Testing is conducted with an “open” Zener.
Note 6: R Typ: Resistance between VIN and VOUT pins during normal operation at room temperature.
Note 7: R1Max: The maximum resistance between VIN and VOUT pins at room temperature, one hour after 1^st trip or after reflow
soldering.
Note 8: VINT Max: VINT Max relates to the voltage across the PPTC portion of the PolyZen device (VIN-VOUT). VINT Max is
defined as the voltage (VIN-VOUT) at which typical qualification devices (98% devices, 95% confidence) survived at
least 100 trip cycles and 24 hours’ trip endurance at the specified voltage (VIN-VOUT) and current (IPTC). VINT Max
testing is conducted using a "shorted" load (VOUT = 0 V). VINT Max is a survivability rating, not a performance rating.
Note 9: IFLT Max: IFLT Max relates to the stead state current flowing through the diode portion of the PolyZen device in a fault
condition, prior to a trip event. IFLT Max is defined as the current at which typical qualification devices (12 parts per lot
from 3 lots) survived 100 test cycles. RMS fault currents above IFLT Max may permanently damage the diode portion
of the PolyZen device. Testing is conducted with NO load connected to VOUT, such that IOUT = 0. “Test voltage” is
defined as the voltage between VIN to GND and includes the PolyZen Diode drop. Specification is dependent on the
direction of current flow through the diode. IFLT Max is a survivability rating, not a performance rating.
Note 10: The power dissipated by the device when in the “tripped” state, as measured on Littelfuse test boards (see note 3).
Note 11: Specifications based on limited qualification data and subject to change.
© 2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised July 26, 2016
littelfuse.com