V18MLE0402NR Datasheet, PDF (3/6 Pages) Littelfuse – Varistor Products Surface Mount Multilayer Varistors (MLVs) > MLE Series

Varistor Products
Surface Mount Multilayer Varistors (MLVs) > MLE Series
Device Characteristics
At low current levels, the V-I curve of the multilayer
transient voltage suppressor approaches a linear (ohmic)
relationship and shows a temperature dependent effect.
At or below the maximum working voltage, the suppressor
is in a high resistance model (approaching 10⁶Ω at its
maximum rated working voltage). Leakage currents at
maximum rated voltage are below 100μ"
UZQJDBMMZ
μA;
GPS

TJ[F
CFMPX
μ"
UZQJDBMMZ
μA.
Typical Temperature Dependance of the Haracteristic
$VSWF
JO
UIF
-FBLBHF
3FHJPO
100%
Clamping Voltage Over Temperature (V_C at 10A)
100
V26MLA1206
V5.5MLA1206
10
-60 -40 -20 0 20 40 60 80 100 120 140
Figure 6
TEMPERATURE (^oC)
10%
1E^-9
Figure 5
25^o 50^o 75^o 100^o 125^oC
1E^-8
1E^-7
1E^-6
1E^-5
1E^-4
SUPPRESSOR CURRENT (A_DC)
1E^-3
1E^-2
Speed of Response
The Multilayer Suppressor is a leadless device. Its
response time is not limited by the parasitic lead
inductances found in other surface mount packages.
The response time of the Z_N0
EJFMFDUSJD
NBUFSJBM
JT
MFTT

than 1ns and the MLE can clamp very fast dV/dT events
such as ESD. Additionally, in "real world" applications,
the associated circuit wiring is often the greatest
factor effecting speed of response. Therefore, transient
suppressor placement within a circuit can be considered
important in certain instances.
Multilayer Internal Construction
FIRED CERAMIC
DIELECTRIC
METAL END
TERMINATION
Figure 7
DEPLETION
REGION
DEPLETION
REGION
METAL
ELECTRODES
GRAINS
Energy Absorption/Peak Current Capability
Energy dissipated within the MLE is calculated by
multiplying the clamping voltage, transient current
and transient duration. An important advantage of the
multilayer is its interdigitated electrode construction within
the mass of dielectric material. This results in excellent
current distribution and the peak temperature per energy
absorbed is very low. The matrix of semiconducting grains
combine to absorb and distribute transient energy (heat)
TFF
4QFFE
PG
3FTQPOTF 
5IJT
ESBNBUJDBMMZ
SFEVDFT
QFBL

temperature; thermal stresses and enhances device
reliability.
As a measure of the device capability in energy and peak
current handling, the V26MLA1206A part was tested with
NVMUJQMF
QVMTFT
BU
JUT
QFBL
DVSSFOU
SBUJOH
"
μs). At
the end of the test, 10,000 pulses later, the device voltage
characteristics are still well within specification.
3FQFUJUJWF
1VMTF
$BQBCJMJUZ
100
PEAK CURRENT = 150A
8/20 s DURATION, 30s BETWEEN PULSES
V26MLA1206
10
0
2000
Figure 8
4000
6000
8000
NUMBER OF PULSES
10000
12000
©2011 Littelfuse, Inc.
Specifications are subject to change without notice.
Please refer to www.littelfuse.com/series/MLE.html for current information.
Revision: November 29, 2011
MLE Varistor Series