1KSMBJ47CA Datasheet, PDF (3/4 Pages) Littelfuse – Silicon Avalanche Diodes

Silicon Avalanche Diodes
1000W Surface Mount Transient Voltage Suppressor
RoHS _{1KSMBJ Series}
®
ELECTRICAL SPECIFICATION @ Tamb 25°C
Part
Number
Device
Code
1KSMBJ 39
1KSMBJ 39A
1KSMBJ 43
1KSMBJ 43A
1KSMBJ 47
1KSMBJ 47A
1KSMBJ 51
1KSMBJ 51A
1KSMBJ 56
1KSMBJ 56A
1KSMBJ 62
1KSMBJ 62A
1KSMBJ 68
1KSMBJ 68A
1KSMBJ 75
1KSMBJ 75A
1KSMBJ 82
1KSMBJ 82A
1KSMBJ 91
1KSMBJ 91A
1KSMBJ 100
1KSMBJ 100A
1KSMBJ 110
1KSMBJ 110A
1KSMBJ 120
1KSMBJ 120A
1KSMBJ 130
1KSMBJ 130A
1KSMBJ 150
1KSMBJ 150A
1KSMBJ 160
1KSMBJ 160A
O10K
O10L
O10M
O10N
O10O
O10P
O10Q
O10R
O10S
O10T
O10U
O10V
O10W
O10X
O10Y
O10Z
P10A
P10B
P10C
P10D
P10E
P10F
P10G
P10H
P10I
P10J
P10K
P10L
P10M
P10N
P10O
P10P
Reverse
Stand Off
Voltage
VR
(Volts)
31.6
33.3
34.8
36.8
38.1
40.2
41.3
43.6
45.4
47.8
50.2
53.0
55.1
58.1
60.7
64.1
66.4
70.1
73.7
77.8
81.0
85.5
89.2
94.0
97.2
102.0
105.0
111.0
121.0
128.0
130.0
136.0
MIN
35.1
37.1
38.7
40.9
42.3
44.7
45.9
48.5
50.4
53.2
55.8
58.9
61.2
64.6
67.5
71.3
73.8
77.9
81.9
86.5
90.0
95.0
99.0
105.0
108.0
114.0
117.0
124.0
135.0
143.0
144.0
152.0
Breakdown
Voltage
VBR (Volts) @ IT
MAX
42.9
41.0
47.3
45.2
51.7
49.4
56.1
53.6
61.6
58.8
68.2
65.1
74.8
71.4
82.5
78.8
90.2
86.1
100.0
95.5
110.0
105.0
121.0
116.0
132.0
126.0
143.0
137.0
165.0
158.0
176.0
168.0
IT (mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Maximum
Reverse
Leakage
IR @ VR
(µA)
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
Maximum
Clamping
Voltage
VC @ IPP
(Volts)
56.4
53.9
61.9
59.3
67.8
64.8
73.5
70.1
80.5
77.0
89.0
85.0
98.0
92.0
108.0
103.0
118.0
113.0
131.0
125.0
144.0
137.0
158.0
152.0
173.0
165.0
187.0
179.0
215.0
207.0
230.0
219.0
Maximum
Peak Pulse
Current
IPP
(A)
17.5
18.7
16.0
16.8
14.8
15.5
13.7
14.3
12.3
13.0
11.3
11.8
10.2
10.8
9.2
9.7
8.5
8.8
7.5
8.0
7.0
7.3
6.3
6.6
5.8
6.1
5.3
5.6
4.7
4.8
4.3
4.6
Notes:
1. All testing is performed at Tamb = 25˚C (+/- 3˚C)
2. Bv is measured using a pulse of 20 milliseconds or less
3. Ir is doubled for Bi-directional devices only with VR equal or less than 10 volts
4. Peak Pulse Current is quoted @ 10/1000 µsec
5. All parameters are stated as tested on a FET Tester Model 3400
6. Vf, for uni-directional devices, is measured using a 300 microsecond square wave pulse @ IT = 50A
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