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SLVU2.8-4 Datasheet, PDF (2/4 Pages) Semtech Corporation – EPD TVS Diode Array For ESD and Latch-Up Protection
TVS Diode Arrays (SPA™Family of Products)
Lightning Surge Protection - SLVU2.8-4 Series
Electrical Characteristics (TOP = 25°C)
Parameter
Symbol
Test Conditions
Min
Reverse Standoff Voltage
VRWM
IR≤1μA
Reverse Breakdown Voltage
VBR
IT=2μA
3.0
Snap Back Voltage
VSB
IT=50mA
2.8
Reverse Leakage Current
Clamping Voltage1
Clamping Voltage1
ILEAK
VR=2.8V (Each Line)
VC
IPP=5A, tP=8/20μs (Each Line)
VC
IPP=24A, tP=8/20μs (Each Line)
ESD Withstand Voltage1
IEC61000-4-2 (Contact)
±30
VESD
IEC61000-4-2 (Air)
±30
Dynamic Resistance
RDYN
(VC2 - VC1) / (IPP2 - IPP1) (Each Line)
Diode Capacitance1
CD
VR=0V, f=1MHz (Each Line)
Note: 1Parameter is guaranteed by design and/or device characterization.
Typ
Max
Units
2.8
V
V
V
1
μA
7.0
8.5
V
13.9
15.0
V
kV
kV
0.4
Ω
2.0
2.5
pF
Absolute Maximum Ratings
Parameter
Peak Pulse Power (tP=8/20µs)
Peak Pulse Current (tP=8/20µs)
Operating Temperature
Storage Temperature
Rating
600
40
-40 to 85
-60 to 150
Units
W
A
ºC
ºC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress only rating and operation of the device
at these or any other conditions above those indicated in the operational sections of this
specification is not implied.
Figure 1: Capacitance vs. Reverse Voltage
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
0.5
1.0
1.5
2.0
2.5
DC Bias (V)
Figure 2: Clamping Voltage vs. IPP
14
12
10
8
6
4
2
0
0
5
10
15
20
25
Peak Pulse Current-IPP (A)
Figure 3: Pulse Waveform
110%
100%
90%
80%
70%
60%
50%
40%
30%
20%
10%
0%
0.0
5.0
10.0 15.0 20.0 25.0 30.0
Time (μs)
SLVU2.8-4 Series
2
Revision: February 15, 2012
©2012 Littelfuse, Inc.
Specifications are subject to change without notice.
Please refer to www.littelfuse.com/SPA for current information.