MG12225WB-BN2MM Datasheet, PDF (2/5 Pages) Littelfuse – 1200V 225A IGBT Module

Power Module
1200V 225A IGBT Module
Electrical and Thermal Specifications (T_J = 25°C, unless otherwise specified)
Symbol
IGBT
V_GE(th)
V_CE(sat)
I_ICES
I_GES
R_Gint
Q_ge
C_ies
C_res
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
I_SC
R_thJC
Diode
V_F
t_RR
I_RRM
E_rec
R_thJCD
Parameters
Test Conditions
Gate - Emitter Threshold Voltage
Collector - Emitter
Saturation Voltage
Collector Leakage Current
Gate Leakage Current
Integrated Gate Resistor
V_CE=V_GE, I_C=9mA
I_C=225A, V_GE=15V, T_J=25°C
I_C=225A, V_GE=15V, T_J=125°C
V_CE=1200V, V_GE=0V, T_J=25°C
V_CE=1200V, V_GE=0V, T_J=125°C
V_CE=0V, V_GE=±15V, T_J=125°C
Gate Charge
Input Capacitance
Reverse Transfer Capacitance
V_CE=600V, I_C=225A , V_GE=±15V
V_CE=25V, V_GE=0V, f =1MHz
Turn - on Delay Time
T_J=25°C
T_J=125°C
Rise Time
Turn - off Delay Time
Fall Time
Turn - on Energy
V_CC=600V
I_C=225A
R_G =3.3Ω
V_GE=±15V
Inductive Load
T_J=25°C
T_J=125°C
T_J=25°C
T_J=125°C
T_J=25°C
T_J=125°C
T_J=25°C
T_J=125°C
Turn - off Energy
T_J=25°C
T_J=125°C
Short Circuit Current
t_psc≤10μS , V_GE=15V; T_J=125°C , V_CC=900V
Junction-to-Case Thermal Resistance (Per IGBT)
Forward Voltage
Reverse Recovery Time
Max. Reverse Recovery Current
Reverse Recovery Energy
I_F=225A, V_GE=0V, T_J =25°C
I_F=225A, V_GE=0V, T_J =125°C
I_F=225A, V_R=600V
di_F/dt=-3600A/µs
T_J=125°C
Junction-to-Case Thermal Resistance (Per Diode)
Min
5.0
-400
Typ
5.8
1.7
2.0
3.3
2.1
16
0.75
160
170
45
50
460
530
100
150
9
13.5
22.5
33
900
1.65
1.6
200
180
18
Max
6.5
1
5
400
0.12
0.2
Unit
V
V
V
mA
mA
nA
Ω
μC
nF
nF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
K/W
V
V
ns
A
mJ
K/W
NTC Characteristics (T_J = 25°C, unless otherwise specified)
Symbol
R₂₅
B_25/50
Parameters
Resistance
Test Conditions
T_c=25°C
Min
Typ
Max
5
3375
Unit
KΩ
K
MG12225WB-BN2MM
1²53
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:10/05/16