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LFUSCD30120B Datasheet, PDF (1/4 Pages) Littelfuse – Enhanced surge capability
SiC Schottky Diode
LFUSCD30120B, 1200 V, 30 A, TO-247 3-lead
LFUSCD30120B
RoHS Pb
Description
The LFUSCD series of silicon carbide (SiC) Schottky di-
odes has near-zero recovery current, high surge capability,
and a maximum operating junction temperature of 175 °C.
The diode series is ideal for applications where improve-
ments in efficiency, reliability, and thermal management
are desired.
Features
• Positive temperature
coefficient for safe
operation and ease of
paralleling
• 175 °C maximum
operating junction
temperature
• Enhanced surge capability
• Extremely fast,
temperature-independent
switching behavior
• Dramatically reduced
switching losses
compared to Si bipolar
diodes
Circuit Diagram
4
Case
4
1
2
3
Applications
• Boost diodes in power
factor correction
• Switch-mode power
supplies
• Uninterruptible power
supplies
• Solar inverters
• Industrial motor drives
Maximum Ratings
Characteristics
DC Blocking Voltage
Repetitive Peak Reverse Voltage, Tj
= 25 °C
Maximum DC Forward Current
Non-Repetitive Forward Surge
Current
Non-Repetitive Avalanche Energy
Power Dissipation
Maximum Operating Junction
Temperature
Storage Temperature
Soldering Temperatures,
Wavesoldering Only Allowed at
Leads
© 2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 10/05/16
1 23
Symbol
VR
VRRM
IF
IFSM
EAS
PTot
TJ,MAX
TSTG
Tsold
Conditions
-
TC = 138°C
TC = 25 °C, 8.3 ms, half sine pulse
Tj = 25 °C, L = 10 mH, Ipk = 5 A per
leg, VDD = 100 V
TC = 25 °C
TC = 138 °C
1.6 mm from case for 10s
Max. (Leg / Device)
1200
1200
15 / 30
120 / 240
132 / 264
187 / 374
46 / 92
175
-55 to 175
260
Unit
V
V
A
A
mJ
W
°C
°C
°C