LFUSCD05120A Datasheet, PDF (1/4 Pages) Littelfuse – Enhanced surge capability

SiC Schottky Diode
LFUSCD05120A, 1200 V, 5 A, TO-220 2-lead
LFUSCD05120A
RoHS Pb
Description
The LFUSCD series of silicon carbide (SiC) Schottky di-
odes has near-zero recovery current, high surge capability,
and a maximum operating junction temperature of 175 °C.
The diode series is ideal for applications where improve-
ments in efficiency, reliability, and thermal management
are desired.
Features
• Positive temperature
coefficient for safe
operation and ease of
paralleling
• 175 °C maximum
operating junction
temperature
• Enhanced surge capability
• Extremely fast,
temperature-independent
switching behavior
• Dramatically reduced
switching losses
compared to Si bipolar
diodes
Circuit Diagram
1
Case
1
2
Applications
• Boost diodes in power
factor correction
• Switch-mode power
supplies
• Uninterruptible power
supplies
• Solar inverters
• Industrial motor drives
Maximum Ratings
Characteristics
DC Blocking Voltage
Repetitive Peak Reverse Voltage, Tj
= 25 °C
Maximum DC Forward Current
Non-Repetitive Forward Surge
Current
Power Dissipation
Maximum Operating Junction
Temperature
Storage Temperature
Soldering Temperatures,
Wavesoldering Only Allowed at
Leads
1
2
Symbol
V_R
V_RRM
I_F
I_FSM
P_Tot
T_J,MAX
T_STG
T_sold
Conditions
-
T_C = 148 °C
T_C = 25 °C, 8.3 ms, half sine pulse
T_C = 25 °C
T_C = 148 °C
1.6 mm from case for 10s
Value
1200
1200
5
40
83
15
175
-55 to 175
260
Unit
V
V
A
A
W
°C
°C
°C
© 2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 10/05/16