2SC5658T2LR Datasheet, PDF (1/4 Pages) Littelfuse – General purpose transistor (50V, 0.15A)

General purpose transistor (50V, 0.15A)
2SC2412K / 2SC4081 / 2SC4617 / 2SC5658
Features
1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.)
2. Complements the 2SA1037AK / 2SA1576A /
2SA1774H / 2SA2029.
Dimensions (Unit : mm)
2SC2412K
2SC4081
Structure
Epitaxial planar type
NPN silicon transistor
1.25
1.6
2.1
2.8
0.3Min.
Each lead has same dimensions
ROHM : SMT3
EIAJ : SC-59
JEDEC : SOT-346
(1) Emitter
(2) Base
(3) Collector
Abbreviated symbol: B*
2SC4617
(1)
(3)
(2)
0.8
1.6
0.1Min.
0.1Min.
Each lead has same dimensions
ROHM : UMT3
EIAJ : SC-70
JEDEC : SOT-323
(1) Emitter
(2) Base
(3) Collector
Abbreviated symbol: B*
2SC5658
1.2
0.2 0.8 0.2
(2)
(3)
(1)
0.15Max.
Absolute maximum (Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power ^{2SC2412K, 2SC4081}
dissipation
2SC4617, 2SC5658
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
ROHM : EMT3
EIAJ : SC-75A
JEDEC : SOT-416
(1) Emitter
(2) Base
(3) Collector
Abbreviated symbol: B*
* Denotes hFE
ROHM : VMT3
(1) Base
(2) Emitter
(3) Collector
Abbreviated symbol: B*
Limits
Unit
60
V
50
V
7
V
0.15
A
0.2
W
0.15
150
°C
−55 to +150
°C
Electrical characteristics (Ta=25C)
Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO 60
Collector-emitter breakdown voltage BVCEO 50
Emitter-base breakdown voltage
BVEBO
7
Collector cutoff current
ICBO
−
Emitter cutoff current
IEBO
−
DC current transfer ratio
hFE
120
Collector-emitter saturation voltage VCE(sat) −
Transition frequency
fT
−
Output capacitance
Cob
−
Typ.
−
−
−
−
−
−
−
180
2
Max.
−
−
−
0.1
0.1
390
0.4
−
3.5
Unit
V
V
V
μA
μA
−
V
MHz
pF
Conditions
IC=50μA
IC=1mA
IE=50μA
VCB=60V
VEB=7V
VCE=6V, IC=1mA
IC/IB=50mA/5mA
VCE=12V, IE=−2mA, f=100MHz
VCE=12V, IE=0A, f=1MHz
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2012.01 - Rev.D