LTST-S110KSKT_14 Datasheet, PDF (4/11 Pages) Lite-On Technology Corporation – ROHS/ LCD Backlight/ Ultra Bright AlInGaP Chip LED

LITE-ON TECHNOLOGY CORPORATION
Property of Lite-On Only
Electrical Optical Characteristics At Ta=25Ċ
Parameter
Symbol
Part No.
LTST-
Min. Typ. Max. Unit Test Condition
Luminous Intensity
IV
S110KSKT 45.0 80.0
mcd
IF = 20mA
Note 1
Viewing Angle
2ǀ1/2 S110KSKT
130
deg Note 2 (Fig.6)
Peak Emission Wavelength
ǃP
S110KSKT
588
nm
Measurement
@Peak (Fig.1)
Dominant Wavelength
ǃd
S110KSKT
587
nm
Note 3
Spectral Line Half-Width
Ƥǃ
S110KSKT
15
nm
Forward Voltage
VF
S110KSKT
2.0
2.4
V
IF = 20mA
Reverse Current
IR
S110KSKT
10
DŽA
VR = 5V
Capacitance
C
S110KSKT
40
PF
VF = 0
f = 1MHZ
Notes: 1. Luminous intensity is measured with a light sensor and filter combination that approximates the
CIE eye-response curve.
2. ǀ1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.
3. The dominant wavelength, ǃd is derived from the CIE chromaticity diagram and represents the
single wavelength which defines the color of the device.
Part No. : LTST-S110KSKT
BNS-OD-C131/A4
Page : 4 of 11