HSDL-4260 Datasheet, PDF (2/4 Pages) AVAGO TECHNOLOGIES LIMITED – High-Power T-1¾ (5mm) AlGaAs Infrared (875nm) Lamp

Absolute Maximum Ratings at 25°C
Parameter
Peak Forward Current
Symbol Minimum
I_FPK
-
Forward Current
Power Dissipation
Reverse Voltage
Storage Temperature
LED Junction Temperature
Lead Soldering Temperature
Notes: Derate as shown in Figure 6.
I_FDC
-
P_DISS
-
V_R
4
T_S
-40
T_J
Maximum
500
100
230
-
100
110
260 for 5 sec
Unit Reference
mA
Figure 3
Duty cycle = 20%
Pulse Width = 100us
mA
[1]
mW
V
I_R=100uA
°C
°C
°C
Recommended Operating Conditions
Parameter
Operating Temperature
Symbol
Min
Max
Unit
Reference
T_O
-40
85
°C
Electrical Characteristics at 25°C
Parameter
Symbol Min. Typ. Max. Unit Condition Reference
Forward Voltage
V_F
-
Forward Voltage
∆V/∆T -
Temperature Coefficient
1.4
1.9
1.7
2.3
-1.3
-
V
mV/°C
I_FDC=20mA
I_FDC=100mA
I_FDC=100mA
Figure 2
Figure 4
Series Resistance
Diode Capacitance
R_S
-
C_O
-
4
-
70
-
Ohms
pF
I_FDC=100mA
V_bias=0V,
f=1MHz
Thermal Resistance,
Junction to Ambient
Rθ_ja
-
300
-
°C/W
Optical Characteristics at 25°C
Parameter
Symbol
Radiant On-Axis Intensity
Radiant On-Axis Intensity
Temperature Coefficient
I_E
∆I_E/∆T
Viewing Angle
Peak Wavelength
Peak wavelength
Temperature Coefficient
2θ_1/2
λ_pk
∆λ/∆T
Spectral Width
∆λ
Optical Rise and Fall Time t_r/t_f
2
Min. Typ. Max. Unit Condition
150
200
-
-
-0.36 -
mW/Sr I_FDC=100mA
%/°C I_FDC=100mA
Reference
Figure 5
-
15
-
-
875
-
-
0.2
-
°
nm
nm/°C
I_FDC=100mA
Figure 7
Figure 1
45
-
15
-
nm
I_FDC=20mA
Figure 1
ns
I_FDC=500mA
Duty Ratio = 20%
Pulse Width=100ns