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MBR4030PT Datasheet, PDF (1/2 Pages) Diodes Incorporated – 40A SCHOTTKY BARRIER RECTIFIER
LITE-ON
SEMICONDUCTOR
MBR4030PT thru 4060PT
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE - 30 to 60 Volts
FORWARD CURRENT - 40 Amperes
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification 94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
MECHANICAL DATA
Case : TO-3P molded plastic
Polarity : As marked on the body
Weight : 0.2 ounces, 5.6 grams
Mounting position : Any
TO-3P
A
G
PIN
123
H
I
J
LL
PIN 1
PIN 3
F
E
P
Q
O
B
K
D
C
N
M
PIN 2
CASE
TO-3P
DIM. MIN. MAX.
A
15.75 16.25
B
21.25 21.75
C
19.60 20.10
D
3.78 4.38
E
1.88 2.08
F
4.87 5.13
G
4.4TYP.
H
1.90
2.16
I
2.93 3.22
J
1.12 1.22
K
2.90 3.20
L
5.20 5.70
M
2.10 2.40
N
0.51 0.76
O
1.93 2.18
P
20 TYP
Q
10 TYP
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current (See Fig.1)
@TC=125 C
SYMBOL
VRRM
VRMS
VDC
I(AV)
MBR
4030PT
30
21
30
MBR
4035PT
35
24.5
35
MBR
4040PT
40
28
40
MBR
4045PT
45
31.5
45
40
MBR
4050PT
50
35
50
MBR
4060PT
60
42
60
UNIT
V
V
V
A
Peak Forward Surge Current
8.3ms single half sine-wave
IFSM
400
A
superimposed on rated load (JEDEC METHOD)
Voltage Rate of Change (Rated VR)
dv/dt
10000
V/us
Maximum Forward
Voltage (Note 1)
IF =20A @
IF =20A @
IF =40A @
IF =40A @
TJ =25 C
TJ =125 C
TJ =25 C
TJ =125 C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =25 C
@TJ =125 C
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance
per element (Note 3)
Operating Temperature Range
Storage Temperature Range
VF
IR
R0JC
CJ
TJ
TSTG
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Thermal Resistance Junction to Case.
3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
0.70
0.60
0.80
0.75
1.0
100
1.4
700
-55 to +150
-55 to +175
0.80
0.70
V
-
-
mA
C/W
pF
C
C
REV. 2, 01-Dec-2000, KTH11