LTE-4206 Datasheet, PDF (1/2 Pages) Lite-On Technology Corporation – GaAlAs T-1 Standard 3 Infrared Emitting Diode

GaAlAs T-1 Standard 3
Infrared Emitting Diode
LTE-4206/LTE-4206C/LTE-4216/LTE-4216C
Features
Selected to specific on-line intensity and radiant inten-
sity ranges.
Low cost plastic end looking package.
Mechanically and spectrally matched to the LTR-4206
series of phototransistor.
The LTE-4206 series are made with Gallium Aluminum
Arsenide window layer on Gallium Arsenide infrared
emitting diodes.
Package Dimensions
Description
The LTE-4206 series are high intensity Gallium Aluminum
Arsenide infrared emitting diodes mounted in clear plas-
tic end looking packages. The LTE-4206 series provides
a broad range of intensity selection. Suffix C-smoke
color lens.
Absolute Maximum Ratings at Ta=25
Parameter
Power Dissipation
Peak forward Current (300pps, 10
Continuous Forward Current
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
[1.6mm (.063 in.) from body]
s pulse)
Notes:
1. All dimensions are in millimeters (inches).
2. Tolerance is 0.25mm (.010") unless otherwise noted.
3. Protruded resin under flange is 1.5mm (.059") max.
4. Lead spacing is measured where the leads emerge from
the package.
5. Specifications are subject to change without notice.
Maximum Rating
90
1
60
5
-40 to +85
-55 to +100
260 for 5 Seconds
Unit
mW
A
mA
V
Electrical Optical Characteristics at Ta=25
Parameter
*Aperture Radiant Incidence
Symbol
Ee
Min.
0.3
Typ.
0.7
Max.
Unit
mW/cm²
Test
Condition
IF=20mA
Radiant Intensity
Ie
2.25
5.26
mW/sr
IF=20mA
Peak Emission Wavelength
Peak
940
nm
IF=20mA
Spectral Line Half-Width
50
nm
IF=20mA
Forward Voltage
VF
1.2
1.6
V
IF=20mA
Reverse Current
IR
100
A
VR=5V
View Angle (See Fig.6)
2 1/2
20
deg
Note: *Ee is a measurement of the average radiant incidence upon a sensing area 1cm² in perpendicular to and
10-10
centered on the mechanical axis of the lens and 26.8mm from lens.