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| LTC3586-1_15 Datasheet, PDF (6/36 Pages) Linear Technology – High Efficiency USB Power Manager with Boost, Buck-Boost and Dual Bucks | |||
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LTC3586/LTC3586-1
Electrical Characteristics The l denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VBUS = 5V, BAT = 3.8V, VIN1 = VIN2 = VIN3 = VIN4 = VOUT3 = 3.8V,
VOUT4 = 5V, RPROG = 1k, RCLPROG = 3.01k, unless otherwise noted.
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNITS
RDS(ON)P4
RDS(ON)N4
ILEAK(P)4
ILEAK(N)4
RVOUT4
DBOOST(MAX)
tSS4
PMOS RDS(ON)
NMOS RDS(ON)
PMOS Switch Leakage
NMOS Switch Leakage
VOUT4 Pull-Down in Shutdown
Maximum Boost Duty Cycle
Soft-Start Time
Synchronous Switch
Main Switch
Synchronous Switch
Main Switch
0.25
Ω
0.17
Ω
â1
1
µA
â1
1
µA
10
kΩ
91
94
%
0.375
ms
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTC3586E/LTC3586E-1 are guaranteed to meet performance
speciï¬cations from 0°C to 85°C. Speciï¬cations over the â40°C to 85°C
operating temperature range are assured by design, characterization and
correlation with statistical process controls.
Note 3: The LTC3586E/LTC3586E-1 include overtemperature protection
that is intended to protect the device during momentary overload
conditions. Junction temperature will exceed 125°C when overtemperature
protection is active. Continuous operation above the speciï¬ed maximum
operating junction temperature may impair device reliability.
Note 4: Total input current is the sum of quiescent current, IVBUSQ, and
measured current given by:
VCLPROG/RCLPROG ⢠(hCLPROG +1)
Note 5: The current limit features of this part are intended to protect the
IC from short term or intermittent fault conditions. Continuous operation
above the maximum specified pin current rating may result in device
degradation or failure.
Note 6: hC/10 is expressed as a fraction of measured full charge current
with indicated PROG resistor.
Note 7: FBx above regulation such that regulator is in sleep. Specification
does not include resistive divider current reflected back to VINX.
Note 8: Guaranteed by design.
typical performance characteristic (TA = 25°C unless otherwise noted)
Ideal Diode V-I Characteristics
1.0
INTERNAL IDEAL DIODE
WITH SUPPLEMENTAL
0.8
EXTERNAL VISHAY
Si2333 PMOS
0.6
INTERNAL IDEAL
DIODE ONLY
0.4
0.2
0
0
VBUS = 0V
VBUS = 5V
0.04 0.08 0.12 0.16 0.20
FORWARD VOLTAGE (V)
3586 G01
Ideal Diode Resistance
vs Battery Voltage
0.25
0.20
INTERNAL IDEAL DIODE
0.15
0.10
0.05
0
2.7
INTERNAL IDEAL DIODE
WITH SUPPLEMENTAL
EXTERNAL VISHAY
Si2333 PMOS
3.0
3.3
3.6
3.9
4.2
BATTERY VOLTAGE (V)
3586 G02
Output Voltage vs Output Current
(Battery Charger Disabled)
4.50
BAT = 4V
VBUS = 5V
5x MODE
4.25
4.00
BAT = 3.4V
3.75
3.50
3.25
0
200 400 600 800
OUTPUT CURRENT (mA)
1000
3586 G03
3586fb
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