LT1055_1 Datasheet, PDF (6/16 Pages) Linear Technology – Precision, High Speed, JFET Input Operational Amplifiers

LT1055/LT1056
TYPICAL PERFORMANCE CHARACTERISTICS
Input Bias and Offset Currents
vs Temperature
1000
300
V_S = ±15V
V_CM = 0V
WARMED UP
BIAS OR OFFSET CURRENTS
MAY BE POSITIVE OR NEGATIVE
100
BIAS CURRENT
30
10
3
0
OFFSET CURRENT
25
50
75 100 125
AMBIENT TEMPERATURE (°C)
LT1055/56 G01
Input Bias Current Over the
Common Mode Range
120
V_S = ±15V
WARMED UP
80
T_A = 125°C
40
A
T_A = 70°C
1200
800
400
0
A
T_A = 25°C
0
– 40
– 80
–120
–15
T_A = 70°C
T_A = 125°C
– 400
B
– 800
A = POSITIVE INPUT CURRENT
B
B = NEGATIVE INPUT CURRENT
–1200
–10 –5 0
5
10 15
COMMON MODE INPUT VOLTAGE (V)
LT1055/56 G02
Distribution of Offset Voltage Drift
with Temperature (H Package)*
140
V_S = ±15V
120
634 UNITS TESTED
FROM THREE RUNS
50% TO
±1.5µV/ °C
100
80
60
40
20
0
–10 –8 –6 –4 –2 0 2 4 6 8 10
OFFSET VOLTAGE DRIFT WITH TEMPERATURE (µV/°C)
*DISTRIBUTION IN THE PLASTIC (N8) PACKAGE
IS SIGNIFICANTLY WIDER.
LT1055/56 G04
Warm-Up Drift
100
V_S = ±15V
T_A = 25°C
80
60
LT1056CN8
40
LT1055CN8
20
LT1056 H PACKAGE
LT1055 H PACKAGE
0
0
1
2
3
4
5
TIME AFTER POWER ON (MINUTES)
LT1055/56 G05
Distribution of Input Offset
Voltage (N8 Package)
160 _{VS = ±15V}
140
T_A = 25°C
550 UNITS
TESTED FROM
120 _{TWO RUNS}
(LT1056)
100
50% YIELD
TO ±140µV
80
60
40
20
0
–800 –600 –400 –200 0 200 400 600 800
INPUT OFFSET VOLTAGE (µV)
LT1055/56 G03
Long Term Drift of
Representative Units
50
40
V_S = ±15V
T_A = 25°C
30
20
10
0
–10
–20
–30
–40
–50
0
1
2
3
TIME (MONTHS)
4
5
LT1055/56 GO6
0.1Hz to 10Hz Noise
LT1056
Noise vs Chip Temperature
10
7
PEAK-TO-PEAK
5
NOISE
Voltage Noise vs Frequency
100
1000
V_S = ±15V
70
T_A = 25°C
300
50
LT1055
0
2
4
6
8
10
TIME (SECONDS)
LT1055/56 GO7
6
3
30
f₀ = 10kHz
2
20
f₀ = 1kHz
1
10
10 20 30 40 50 60 70 80
CHIP TEMPERATURE (°C)
LT1055/56 G08
100
LT1056
1/f CORNER = 28HZ
30
LT1055
1/f CORNER
= 20HZ
10
1
3 10
30 100
FREQUENCY (Hz)
300 1000
LT1055/56 G09
10556fc