LT1187 Datasheet, PDF (4/12 Pages) Linear Technology – Low Power Video Difference Amplifier

LT1187
+–5V _{ELECTRICAL CHARACTERISTICS 0°C ≤ TA ≤ 70°C, (Note 3)}
V_S = ±5V, V_REF = 0V, R_FB1 = 900Ω from pins 6 to 8, R_FB2 = 100Ω from pin 8 to ground, R_L = R_FB1 + R_FB2 = 1k, C_L ≤ 10pF, pin 5 open.
SYMBOL
PARAMETER
CONDITIONS
LT1187C
MIN TYP MAX
UNITS
V_OS
∆V_OS /∆T
I_OS
I_B
Input Offset Voltage
Input V_OS Drift
Input Offset Current
Input Bias Current
Input Voltage Range
Either Input, (Note 4)
Either Input
Either Input
2.0 12
9.0
0.2 1.5
± 0.5 ±3.5
– 2.5
3.5
mV
µV/°C
µA
µA
V
CMRR
PSRR
V_OUT
Common-Mode Rejection Ratio
Power Supply Rejection Ratio
Output Voltage Swing
G_E
Gain Error
I_S
Supply Current
Shutdown Supply Current
I_S/D
Shutdown Pin Current
V_CM = –2.5V to 3.5V
V_S = ±2.375V to ±8V
V_S = ±5V, R_L = 1k, A_V = 50
V_S = ±8V, R_L = 1k, A_V = 50
V_S = ±8V, R_L = 300Ω, A_V = 50, (Note 3)
V_O = ±1V, A_V = 10, R_L = 1k
Pin 5 at V ^–, (Note 11)
Pin 5 at V ^–
70 100
dB
65
85
dB
±3.7 ±4.0
V
±6.6 ±7.0
±6.4 ± 6.8
0.2 1.0
%
13 17
mA
0.8 1.5
mA
5
25
µA
5V ELECTRICAL CHARACTERISTICS _{VS+ =}
5V, V_S ^– = 0V, V_REF
=
0°C ≤ T_A ≤ 70°C, (Note 3)
2.5V, R_FB1 = 900Ω from pins 6 to 8, R_FB2 = 100Ω from pin 8 to V_REF, R_L = R_FB1 + R_FB2 = 1k, C_L ≤ 10pF, pin 5 open.
SYMBOL
PARAMETER
CONDITIONS
LT1187C
MIN TYP MAX
UNITS
V_OS
Input Offset Voltage
Either Input, (Note 4)
SOIC Package
2.0 12.0
mV
2.0 13.0
mV
∆V_OS/∆T
I_OS
I_B
Input V_OS Drift
Input Offset Current
Input Bias Current
Input Voltage Range
Either Input
Either Input
9.0
0.2 1.5
± 0.5 ± 3.5
2.0
3.5
µV/°C
µA
µA
V
CMRR
Common-Mode Rejection Ratio
V_CM = 2.0V to 3.5V
70 100
dB
V_OUT
Output Voltage Swing
R_L = 300Ω to Ground
V_OUT High
3.5 4.0
V
(Note 3)
V_OUT Low
0.15 0.4
I_S
Supply Current
Shutdown Supply Current
Pin 5 at V ^–, (Note 11)
12 16
mA
0.8 1.5
mA
I_S/D
Shutdown Pin Current
Pin 5 at V ^–
5
25
µA
Note 1: A heat sink may be required to keep the junction temperature below
absolute maximum when the output is shorted continuously.
Note 2: T_J is calculated from the ambient temperature T_A and power dissipation
P_D according to the following formulas:
LT1187MJ8,LT1187CJ8: T_J = T_A + (P_D × 100°C/W)
LT1187CN8:
T_J = T_A + (P_D × 100°C/W)
LT1187CS8:
T_J = T_A + (P_D × 150°C/W)
Note 3: When R_L = 1k is specified, the load resistor is R_FB1 + R_FB2, but when
R_L = 300Ω is specified, then an additional 430Ω is added to the output such
that (R_FB1 + R_FB2) in parallel with 430Ω is R_L = 300Ω.
Note 4: V_OS measured at the output (pin 6) is the contribution from both input
pair, and is input referred.
Note 5: V_{IN LIM} is the maximum voltage between –V_IN and +V_IN (pin 2 and
pin 3) for which the output can respond.
Note 6: Slew rate is measured between ±0.5V on the output, with a V_IN step
of ±0.75V, A_V = 3 and R_L = 1k.
Note 7: Full power bandwidth is calculated from the slew rate measurement:
FPBW = SR/2πVp.
Note 8: Settling time measurement techniques are shown in “Take the
Guesswork Out of Settling Time Measurements,” EDN, September 19, 1985.
Note 9: NTSC (3.58MHz).
Note 10: AC parameters are 100% tested on the ceramic and plastic DIP
packaged parts (J8 and N8 suffix) and are sample tested on every lot of the SO
packaged parts (S8 suffix).
Note 11: See Application section for shutdown at elevated temperatures. Do
not operate shutdown above T_J > 125°C.
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