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LT1101_15 Datasheet, PDF (4/16 Pages) Linear Technology – Precision, Micropower, Single Supply Instrumentation Amplifier
LT1101
ELECTRICAL CHARACTERISTICS VS = ±15V, VCM = 0V, TA = 25°C, Gain = 10 or 100, unless otherwise noted.
SYMBOL PARAMETER
VO
Maximum 0utput
Voltage Swing
BW
Bandwidth
SR
Slew Rate
CONDITIONS
RL = 50k
RL = 2k
G = 100 (Note 2)
G = 10 (Note 2)
LT1101AM/AI
MIN TYP MAX
13.0 14.2
11.0 13.2
2.3
3.5
25
37
0.06 0.10
LT1101M/I
MIN TYP MAX
13.0 14.2
11.0 13.2
2.3
3.5
25
37
0.06 0.10
UNITS
V
V
kHz
kHz
V/µs
ELECTRICAL CHARACTERISTICS VS = ±15V, VCM = 0V, Gain = 10 or 100, –55°C ≤ TA ≤ 125°C for AM/M
grades, –40°C ≤ TA ≤ 85°C for AI/I grades, unless otherwise noted.
SYMBOL PARAMETER
CONDITIONS
LT1101AM/AI
MIN TYP MAX
LT1101M/I
MIN TYP MAX
UNITS
GE
Gain Error
TCGE
Gain Error Drift
(Note 2)
G = 100, VO = ±10V, RL = 50k
G = 100, VO = ±10V, RL = 5k
G = 10, VO = ±10V, RL = 50k or 5k
G = 100, RL = 50k
G = 100, RL = 5k
G = 10, RL = 50k or 5k
0.024
0.030
0.015
2
2
1
0.070
0.100
0.070
4
7
4
0.026
0.035
0.018
2
2
1
0.100
0.130
0.100
5
8
5
%
%
%
ppm/°C
ppm/°C
ppm/°C
GNL
Gain Nonlinearity
G = 100, RL = 50k
G = 100, RL = 5k
G = 10, RL = 50k
G = 10, RL = 5k
24
70
70
300
4
13
10
40
26
90
ppm
75
500
ppm
5
15
ppm
12
60
ppm
VOS
Input Offset Voltage
LT1101ISW
90
350
110
500
µV
110
950
µV
∆VOS/∆T Input Offset Voltage Drift (Note 2)
LT1101ISW
0.4
2.0
0.5
2.8
µV/°C
0.5
4.8
mV/°C
lOS
Input Offset Current
∆lOS/∆T Input Offset Current Drift
(Note 2)
0.16 0.80
0.5
4.0
0.19 1.30
0.8
7.0
nA
pA/°C
IB
∆IB/∆T
CMRR
PSRR
Input Bias Current
Input Bias Current Drift
Common Mode
Rejection Ratio
Power Supply
Rejection Ratio
(Note 2)
G = 100, VCM = –14.4V to 13V
G = 100, VCM = –13V to 11.5V
VS = 3.0, –0.1V to ±18V
7
10
10
25
96
111
80
99
98
110
7
12
10
30
94
111
78
98
94
110
nA
pA/°C
dB
dB
dB
IS
Supply Current
VO
Maximum 0utput
Voltage Swing
RL = 50k
RL = 5k
105 165
108
190
µA
12.5 14.0
12.5 14.0
V
11.0 13.5
11.0 13.5
V
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