LTC4442 Datasheet, PDF (3/12 Pages) Linear Technology – High Speed Synchronous N-Channel MOSFET Drivers

LTC4442/LTC4442-1
ELECTRICAL CHARACTERISTICS The ● denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at T_A = 25°C. V_CC = V_BOOST = 7V, V_TS = GND = 0V, V_LOGIC = 5V, unless otherwise noted.
SYMBOL
UVLO
PARAMETER
Undervoltage Lockout Threshold
CONDITIONS
V_CC Rising (LTC4442)
V_CC Falling (LTC4442)
Hysteresis (LTC4442)
V_CC Rising (LTC4442-1)
V_CC Falling (LTC4442-1)
Hysteresis (LTC4442-1)
MIN TYP MAX UNITS
● 2.75 3.20 3.65
V
● 2.60 3.04 3.50
V
160
mV
● 5.6
6.2
6.7
V
● 4.7
5.3
5.8
V
850
mV
Bootstrapped Supply (BOOST – TS)
I_BOOST
Input Signal (IN)
V_IH(TG)
DC Supply Current
TG Turn-On Input Threshold
V_IL(TG)
TG Turn-Off Input Threshold
V_IH(BG)
BG Turn-On Input Threshold
V_IL(BG)
BG Turn-Off Input Theshold
I_IN(SD)
Maximum Current Into or Out of IN in
Shutdown Mode
High Side Gate Driver Output (TG)
IN = Floating
V_LOGIC ≥ 5V, IN Rising
V_LOGIC = 3.3V, IN Rising
V_LOGIC ≥ 5V, IN Falling
V_LOGIC = 3.3V, IN Falling
V_LOGIC ≥ 5V, IN Falling
V_LOGIC = 3.3V, IN Falling
V_LOGIC ≥ 5V, IN Rising
V_LOGIC = 3.3V, IN Rising
V_LOGIC ≥ 5V, IN Floating
V_LOGIC = 3.3V, IN Floating
325
400
μA
● 3.0
3.5
4.0
V
● 1.9
2.2
2.6
V
3.25
V
2.09
V
● 0.8
1.25
1.6
V
● 0.8
1.10
1.4
V
1.50
V
1.21
V
200
300
μA
100
150
μA
V_OH(TG)
TG High Output Voltage
I_TG = –10mA, V_OH(TG) = V_BOOST – V_TG
0.7
V
V_OL(TG)
TG Low Output Voltage
I_TG = 100mA, V_OL(TG) = V_TG – V_TS
100
mV
I_PU(TG)
TG Peak Pull-Up Current
● 1.5
2.4
A
I_PD(TG)
TG Peak Pull-Down Current
● 1.5
2.4
A
Low Side Gate Driver Output (BG)
V_OH(BG)
BG High Output Voltage
I_BG = –10mA, V_OH(BG) = V_CC – V_BG
0.7
V
V_OL(BG)
BG Low Output Voltage
I_BG = 100mA
100
mV
I_PU(BG)
BG Peak Pull-Up Current
● 1.4
2.4
A
I_PD(BG)
BG Peak Pull-Down Current
● 3.5
5.0
A
Switching Time
t_PLH(TG)
t_PHL(TG)
t_PLH(BG)
t_PHL(BG)
t_r(TG)
t_f(TG)
t_r(BG)
t_r(BG)
BG Low to TG High Propagation Delay
IN Low to TG Low Propagation Delay
TG Low to BG High Propagation Delay
IN High to BG Low Propagation Delay
TG Output Rise Time
TG Output Fall Time
BG Output Rise Time
BG Output Fall Time
10% – 90%, C_L = 3nF
10% – 90%, C_L = 3nF
10% – 90%, C_L = 3nF
10% – 90%, C_L = 3nF
20
ns
12
ns
20
ns
12
ns
12
ns
8
ns
12
ns
5
ns
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTC4442I/LTC4442I-1 are guaranteed to meet specifications
from –40°C to 85°C. The LTC4442E/LTC4442E-1 are guaranteed to meet
specifications from 0°C to 85°C with specifications over the –40°C to
85°C operating temperature range assured by design, characterization and
correlation with statistical process controls.
T_J is calculated from the ambient temperature T_A and power dissipation P_D
according to the following formula:
T_J = T_A + (PD • θ_JA°C/W)
Note 3: This IC includes overtemperature protection that is intended
to protect the device during momentary overload conditions. Junction
temperature will exceed 125°C when overtemperature protection is active.
Continuous operation above the specified maximum operating junction
temperature may impair device reliability.
4442fa
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