LT5571 Datasheet, PDF (3/16 Pages) Linear Technology – 620MHz - 1100MHz High Linearity Direct Quadrature Modulator

LT5571
ELECTRICAL CHARACTERISTICS V_CC = 5V, EN = High, T_A = 25°C, f_LO = 900MHz, f_RF = 902MHz,
P_LO = 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 0.5V_DC, Baseband Input Frequency = 2MHz, I & Q 90° shifted (upper
sideband selection). P_RF(OUT) = –10dBm, unless otherwise noted. (Note 3)
LO Input (LO)
f_LO
LO Frequency Range
P_LO
LO Input Power
S_{11, ON}
LO Input Return Loss
S_{11, OFF}
LO Input Return Loss
NF_LO
LO Input Referred Noise Figure
G_LO
LO to RF Small Signal Gain
IIP3_LO
LO Input 3rd Order Intercept
Baseband Inputs (BBPI, BBMI, BBPQ, BBMQ)
EN = High (Note 6)
EN = Low (Note 6)
at 900MHz (Note 5)
at 900MHz (Note 5)
at 900MHz (Note 5)
0.5 to 1.2
GHz
–10
0
5
dBm
–10.9
dB
–2.6
dB
14.3
dB
18.5
dB
–4.8
dBm
BW_BB
V_CMBB
R_IN
I_{DC, IN}
P_LO-BB
IP1dB
Baseband Bandwidth
DC Common-Mode Voltage
Differential Input Resistance
Baseband Static Input Current
Carrier Feedthrough on BB
Input 1dB Compression Point
ΔG_I/Q
I/Q Absolute Gain Imbalance
Δϕ_I/Q
I/Q Absolute Phase Imbalance
Power Supply (V_CC)
V_CC
Supply Voltage
I_CC(ON)
Supply Current
I_CC(OFF)
Supply Current, Shutdown Mode
t_ON
Turn-On Time
t_OFF
Turn-Off Time
Enable (EN), Low = Off, High = On
–3dB Bandwidth
Externally Applied (Note 4)
(Note 4)
No Baseband Signal (Note 4)
Differential Peak-to-Peak (Note 7)
EN = High
EN = 0V
EN = Low to High (Note 11)
EN = High to Low (Note 12)
400
0.5
90
–24
–42
2.9
0.013
0.24
MHz
0.6
V
kΩ
µA
dBm
V_P-P,DIFF
dB
Deg
4.5
5
5.25
V
97
120
mA
100
µA
0.4
µs
1.4
µs
Enable
Input High Voltage
Input High Current
EN = High
EN = 5V
1
V
230
µA
Shutdown
Input Low Voltage
EN = Low
0.5
V
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: Specifications over the –40°C to 85°C temperature range are
assured by design, characterization and correlation with statistical process
controls.
Note 3: Tests are performed as shown in the configuration of Figure 7.
Note 4: At each of the four baseband inputs BBPI, BBMI, BBPQ and BBMQ.
Note 5: V(BBPI) – V(BBMI) = 1V_DC, V(BBPQ) – V(BBMQ) = 1V_DC.
Note 6: Maximum value within –1dB bandwidth.
Note 7: An external coupling capacitor is used in the RF output line.
Note 8: At 20MHz offset from the LO signal frequency.
Note 9: At 20MHz offset from the CW signal frequency.
Note 10: At 5MHz offset from the CW signal frequency.
Note 11: RF power is within 10% of final value.
Note 12: RF power is at least 30dB lower than in the ON state.
Note 13: Baseband is driven by 2MHz and 2.1MHz tones. Drive level is set
in such a way that the two resulting RF tones are –10dBm each.
Note 14: IM2 measured at LO frequency + 4.1MHz
Note 15: IM3 measured at LO frequency + 1.9MHz and LO frequency +
2.2MHz.
Note 16: Amplitude average of the characterization data set without image
or LO feed-through nulling (unadjusted).
Note 17: The difference in conversion gain between the spurious signal at
f = 3 • LO – BB versus the conversion gain at the desired signal at f = LO +
BB for BB = 2MHz and LO = 900MHz.
5571f
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