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LT1102_07 Datasheet, PDF (3/12 Pages) Linear Technology – High Speed, Precision, JFET Input Instrumentation Amplifier (Fixed Gain = 10 or 100)
LT1102
ELECTRICAL CHARACTERISTICS VS = ±15V, VCM = 0V, TA = 25°C, Gain = 10 or 100, unless otherwise noted.
SYMBOL
GE
GNL
PARAMETER
Gain Error
Gain Nonlinearity
VOS
IOS
IB
en
CMRR
PSRR
IS
VO
BW
SR
Input Offset Voltage
Input Offset Current
Input Bias Current
Input Resistance
Common Mode
Differential Mode
Input Noise Voltage
Input Noise Voltage
Density
Input Noise Current
Density
lnput Voltage Range
Common Mode
Rejection Ratio
Power Supply
Rejection Ratio
Supply Current
Maximum Output
Voltage Swing
Bandwidth
Slew Rate
Overdrive Recovery
Settling Time
CONDITIONS
VO = ±10V, RL = 50k or 2k
G = 100, RL = 50k
G = 100, RL = 2k
G = 10, RL = 50k or 2k
VCM = – 11V to 8V
VCM = 8V to 11V
0.1Hz to 10Hz
fO = 10Hz
fO = 1000Hz (Note 2)
fO = 1000Hz, 10Hz (Note 3)
1k Source Imbalance, VCM = ±10.5V
VS = ± 9V to ±18V
RL = 50k
RL = 2k
G = 100 (Note 4)
G = 10 (Note 4)
G = 100, VIN = ±0.13V, VO = ±5V
G = 10, VIN = ±1V, VO = ±5V
50% Overdrive (Note 5)
VO = 20V Step (Note 4)
G = 10 to 0.05%
G = 10 to 0.01%
G = 100 to 0.05%
G = 100 to 0.01%
LT1102AM/AC
MIN TYP MAX
0.010 0.050
3
14
8
20
7
16
180 600
3
40
±3 ±40
LT1102M/I/C
MIN TYP MAX
0.012 0.070
4
18
8
25
7
30
200
900
4
60
±4
±60
UNITS
%
ppm
ppm
ppm
μV
pA
pA
1012
1011
1012
2.8
37
19
30
1.5
4
1012
Ω
1011
Ω
1012
Ω
2.8
μVP-P
37
nV/√Hz
20
nV/√Hz
2
5
fA/√Hz
±10.5 ±11.5
±10.5 ±11.5
V
84
98
82
97
dB
88 102
86
101
dB
3.3 5.0
3.4
5.6
mA
±13.0 ±13.5
±13.0 ±13.5
V
±12.0 ±13.0
±12.0 ±13.0
V
120 220
100 220
kHz
2.0 3.5
1.7
3.5
MHz
12
17
10
17
V/μs
21
30
18
30
V/μs
400
400
ns
1.8 4.0
3.0 6.5
7
13
9
18
1.8
4.0
μs
3.0
6.5
μs
7
13
μs
9
18
μs
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