LT1022_15 Datasheet, PDF (3/12 Pages) Linear Technology – High Speed, Precision JFET Input Operational Amplifier

LT1022
ELECTRICAL CHARACTERISTICS V_S = ±15V, T_A = 25°C, V_CM = 0V unless otherwise noted.
SYMBOL PARAMETER
GBW Gain-Bandwidth Product
I_S
Supply Current
Settling Time
Offset Voltage Adjustment Range
CONDITIONS
f = 1MHz
A = +1 or A = –1
10V Step to 0.05%
10V Step to 0.02%
R_POT = 100k
LT1022AM
LT1022AC
MIN TYP MAX
8.5
5.2 7.0
LT1022M, LT1022CH
LT1022CN8
MIN TYP
MAX
8.0
5.2
7.0
0.9
0.9
1.3
1.3
±7
±7
UNITS
MHz
mA
µs
µs
mV
The ● denotes the specifications which apply over the full operating temperature range of V_CM = 0V, 0°C ≤ T_A ≤ 70°C. V_S = ± 15V,
unless otherwise noted.
SYMBOL PARAMETER
CONDITIONS
LT1022AC
MIN TYP MAX
LT1022CH
LT1022CN8
MIN TYP MAX
UNITS
V_OS
I_OS
I_B
A_VOL
CMRR
PSRR
V_OUT
Input Offset Voltage
(Note 2)
Average Temperature
Coefficient of Input Offset Voltage
Input Offset Current
Input Bias Current
Large-Signal Voltage Gain
Common Mode Rejection Ratio
Power Supply Rejection Ratio
Output Voltage Swing
H Package
●
N8 Package
●
H Package
●
N8 Package (Note 6)
●
Warmed Up, T_A = 70°C ●
Warmed Up, T_A = 70°C ●
V_O = ±10V, R_L = 2k
●
V_CM = ±10.4V
●
V_S = ±10V to ±18V
●
R_L = 2k
●
140 480
1.3
5.0
15
80
±50 ±200
80 250
60
85
93
80
86 103
84
±12 ±13.1
±12
180
300
1.8
3.0
18
±60
250
91
101
±13.1
1000
1700
9.0
15.0
100
±250
µV
µV
µV/°C
µV/°C
pA
pA
V/mV
dB
dB
V
The ● denotes the specifications which apply over the full operating temperature range of – 55°C ≤ T_A ≤ 125°C. V_S = ± 15V, V_CM = 0V,
unless otherwise noted.
SYMBOL PARAMETER
CONDITIONS
LT1022AM
LT1022M
MIN TYP MAX MIN TYP MAX UNITS
V_OS
Input Offset Voltage
(Note 2)
Average Temperature
Coefficient of Input Offset Voltage
(Note 6)
●
230
750
●
1.5
5.0
300 1500
µV
2.0
9.0
µV/°C
I_OS
Input Offset Current
Warmed Up, T_A = 125°C
I_B
Input Bias Current
Warmed Up, T_A = 125°C
A_VOL
Large Signal Voltage Gain
V_O = ±10V, R_L = 2k
CMRR Common-Mode Rejection Ratio
V_CM = ±10.4V
PSRR Power Supply Rejection Ratio
V_S = ±10V to ±17V
V_OUT
Output Voltage Swing
R_L = 2k
Note 1: Absolute Maximum Ratings are those values beyond which the
life of a device may be impaired.
Note 2: Offset voltage is measured under two different conditions:
(a) approximately 0.5 seconds after application of power;
(b) at T_A = 25°C, with the chip self-heated to approximately 45°C
to account for chip temperature rise when the device is fully warmed up.
Note 3: 10Hz noise voltage density is sample tested on every lot of A
grades. Devices 100% tested at 10Hz are available on request.
●
0.3
2.0
0.30
3.0
nA
●
± 0.5 ± 4.0
± 0.7 ± 6.0
nA
● 40 120
35
120
V/mV
● 85
92
80
90
dB
● 86 102
84
100
dB
● ±12 ±12.9
±12 ±12.9
V
Note 4: This parameter is tested on a sample basis only.
Note 5: Current noise is calculated from the formula: i_n = (2qI_B)^1/2, where
q = 1.6 • 10 ^–19 coulomb. The noise of source resistors up to 1GΩ swamps
the contribution of current noise.
Note 6: Offset voltage drift with temperature is practically unchanged when
the offset voltage is trimmed to zero with a 100k potentiometer between
the balance terminals and the wiper tied to V⁺. Devices tested to tighter
drift specifications are available on request.
1022fa
3