LTC3855_15 Datasheet, PDF (21/44 Pages) Linear Technology – Dual, Multiphase Synchronous DC/DC Controller with Differential Remote Sense

LTC3855
Applications Information
A reasonable starting point is to choose a ripple current
that is about 40% of I_OUT(MAX) for a duty cycle less than
40%. Note that the largest ripple current occurs at the
highest input voltage. To guarantee that ripple current does
not exceed a specified maximum, the inductor should be
chosen according to:
L≥
V_IN – V_OUT
f_OSC • I_RIPPLE
•
V_OUT
V_IN
For duty cycles greater than 40%, the 10mV current
sense ripple voltage requirement is relaxed because the
slope compensation signal aids the signal-to-noise ratio
and because a lower limit is placed on the inductor value
to avoid subharmonic oscillations. To ensure stability for
duty cycles up to the maximum of 95%, use the following
equation to find the minimum inductance.
L_MIN
>
f_SW
V_OUT
• I_LOAD(MAX)
•
1.4
where
L_MIN is in units of µH
f_SW is in units of MHz
Inductor Core Selection
Once the inductance value is determined, the type of in-
ductor must be selected. Core loss is independent of core
size for a fixed inductor value, but it is very dependent
on inductance selected. As inductance increases, core
losses go down. Unfortunately, increased inductance
requires more turns of wire and therefore copper losses
will increase.
Ferrite designs have very low core loss and are preferred
at high switching frequencies, so design goals can con-
centrate on copper loss and preventing saturation. Ferrite
core material saturates “hard,” which means that induc-
tance collapses abruptly when the peak design current is
exceeded. This results in an abrupt increase in inductor
ripple current and consequent output voltage ripple. Do
not allow the core to saturate!
Power MOSFET and Schottky Diode
(Optional) Selection
Two external power MOSFETs must be selected for each
controller in the LTC3855: one N-channel MOSFET for the
top (main) switch, and one N-channel MOSFET for the
bottom (synchronous) switch.
The peak-to-peak drive levels are set by the INTV_CC
voltage. This voltage is typically 5V during start-up
(see EXTV_CC Pin Connection). Consequently, logic-level
threshold MOSFETs must be used in most applications.
The only exception is if low input voltage is expected (V_IN
< 5V); then, sub-logic level threshold MOSFETs (V_GS(TH)
< 3V) should be used. Pay close attention to the BV_DSS
specification for the MOSFETs as well; most of the logic
level MOSFETs are limited to 30V or less.
Selection criteria for the power MOSFETs include the
on-resistance R_DS(ON), Miller capacitance C_MILLER, input
voltage and maximum output current. Miller capacitance,
C_MILLER, can be approximated from the gate charge curve
usually provided on the MOSFET manufacturers’ data
sheet. C_MILLER is equal to the increase in gate charge
along the horizontal axis while the curve is approximately
flat divided by the specified change in V_DS. This result is
then multiplied by the ratio of the application applied V_DS
to the gate charge curve specified V_DS. When the IC is
operating in continuous mode the duty cycles for the top
and bottom MOSFETs are given by:
Main
Switch
Duty
Cycle
=
V_OUT
V_IN
Synchronous
Switch
Duty
Cycle
=
V_IN
– V_OUT
V_IN
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