RH111 Datasheet, PDF (2/4 Pages) Linear Technology – Voltage Comparator

RH111
TABLE 1: ELECTRICAL CHARACTERISTICS (Preirradiation) (Note 8)
SYMBOL PARAMETER
CONDITIONS
V_OS
Input Offset Voltage
R_S ≤ 50k
I_OS
Input Offset Current
I_B
Input Bias Current
A_VOL Large-Signal Voltage Gain
Input Voltage Range
V_S = ±15V, V_PIN7 ≤ 5V
t_D
Response Time
V_OL
Output Saturation Voltage V_IN = 5mV, I_OUT = 50mA,
V ⁺ ≥ 4.5V, V ^– = 0V
Output Leakage Current
Positive Supply Current
V_IN ≤ 6mV, I_OUT ≤ 8mA
V_IN = 5V, I_STROBE = 3mA,
V_OUT = 20V
Negative Supply Current
Strobe Current
Minimum to Ensure Output
Transistor Is Turned Off
Input Capacitance
T_A = 25°C
NOTES MIN TYP MAX
3,4
3.0
3,4
10
3
100
7
40
– 14.5
13.0
5
200
1.5
0.4
10
6.0
5.0
6
3
6
SUB- – 55°C ≤ T_A ≤ 125°C SUB-
GROUP MIN TYP MAX GROUP
1
4.0
2,3
1
20
2,3
1
150
2,3
4
1 – 14.5
13.0 2,3
1
1
0.4
2,3
1
500
2,3
1
1
UNITS
mV
nA
nA
V/mV
V
ns
V
V
nA
mA
mA
mA
pF
TABLE 1A: ELECTRICAL CHARACTERISTICS (Postirradiation) (Note 9)
SYMBOL PARAMETER
V_OS
Input Offset Voltage
I_OS
Input Offset Current
I_B
Input Bias Current
A_VOL
Large-Signal Voltage Gain
Input Voltage Range
V_OL
Output Saturation Voltage
Output Leakage Current
Positive Supply Current
Negative Supply Current
Strobe Current
Input Capacitance
CONDITIONS
R_S ≤ 50k
V_S = ±15V, V_PIN7 ≤ 5V
V_IN = 5mV, I_OUT = 50mA
V ⁺ ≥ 4.5V, V ^– = 0V
V_IN ≤ 6mV, I_OUT ≤ 8mA
V_IN ≥ 5mV, I_STROBE = 3mA
V_OUT = 20V
Minimum to Ensure Output
Transistor Is Turned Off
10KRAD(Si) 20KRAD(Si) 50KRAD(Si) 100KRAD(Si) 200KRAD(Si)
NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS
3.0
3.0
3.0
3.0
4.0 mV
10
10
10
25
50
nA
100
150
200
300
400 nA
7 40
40
40
40
25
V/mV
–14.5 13.0 –14.5 13.0 –14.5 13.0 –14.5 13.0 – 14.5 13.0
V
1.5
1.5
1.5
1.5
1.5
V
0.4
0.4
0.4
0.4
0.4
V
10
10
100
100
100 nA
6.0
6.0
6.0
6.0
6.0 mA
5.0
5.0
5.0
5.0
5.0 mA
6
3 (Typ)
3(Typ)
3(Typ)
3(Typ)
3(Typ) mA
6 (Typ)
6(Typ)
6(Typ)
6(Typ)
6(Typ) pF
2