|
RH1056 Datasheet, PDF (2/2 Pages) Linear Technology – Precision, High Speed, JFET Input Operational Amplifier | |||
|
◁ |
DICE/DWF SPECIFICATION
RH1056
DICE ELECTRICAL TEST LIMITS (Note 3)
SYMBOL
VOUT
CMRR
PSRR
SR
IS
PARAMETER
Output Voltage Swing
Common Mode Rejection Ratio
Power Supply Rejection Ratio
Slew Rate
Supply Current
CONDITIONS
RL = 2k, VS = ±15V
VCM = ±11V, VS = ±15V
VS = ±10V to ±18V
(Note 5)
MIN
MAX
UNITS
±12
V
86
dB
88
dB
10
V/μs
6
mA
Note 1: Dice are probe tested at 25°C to the limits shown. Final specs,
after assembly cannot be guaranteed at the die level due to yield loss and
assembly shifts. For absolute maximum ratrings, typical speciï¬cations,
performance curves and ï¬nished product speciï¬cations, please refer to the
standard product data sheet.
Note 2: For dice tested to tighter limits than those listed above and/or, lot
qualiï¬cation based on sample lot assembly and testing, please contact LTC
Marketing.
Note 3: VS = ±15V, TA = 25°C, VCM = 0V, unless otherwise noted.
Note 4: This is not a reï¬ection of actual IOS and IB. Typical values are 5pA
and 20pA respectively at ï¬nal test. JFETs sensitivity to light at wafer sort
requires a loose limit.
Note 5: Tested at a gain of â5â.
Rad Hard die require special handling as compared to standard IC chips.
Rad Hard die are susceptible to surface damage because there is no silicon
nitride passivation as on standard die. Silicon nitride protects the die surface
from scratches by its hard and dense properties. The passivation on Rad Hard
die is silicon dioxide that is much âsofterâ than silicon nitride.
LTC recommends that die handling be performed with extreme care so
as to protect the die surface from scratches. If the need arises to move
the die around from the chip tray, use a Teï¬on-tipped vacuum wand.
This wand can be made by pushing a small diameter Teï¬on tubing onto the
tip of a steel-tipped wand. The inside diameter of the Teï¬on tip should match
the die size for efï¬cient pickup. The tip of the Teï¬on should be cut square
and ï¬at to ensure good vacuum to die surface. Ensure the Teï¬on tip remains
clean from debris by inspecting under stereoscope.
During die attach, care must be exercised to ensure no tweezers touch the
top of the die.
Wafer level testing is performed per the indicated speciï¬cations for dice. Considerable differences in performance can often be observed for dice versus
packaged units due to the inï¬uences of packaging and assembly on certain devices and/or parameters. Please consult factory for more information
on dice performance and lot qualiï¬cations via lot sampling test procedures.
Dice data sheet subject to change. Please consult factory for current revision in production.
2
Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 â FAX: (408) 434-0507 â www.linear.com
I.D.No. 66-13-1056
LT 0606 ⢠PRINTED IN USA
 LINEAR TECHNOLOGY CORPORATION 2006
|