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LTC3550-1_15 Datasheet, PDF (17/24 Pages) Linear Technology – Dual Input USB/AC Adapter Li-Ion Battery Charger with 600mA Buck Converter | |||
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LTC3550-1
APPLICATIO S I FOR ATIO
Using Ceramic Input and Output Capacitors
Higher capacitance values, lower cost ceramic capacitors
are now becoming available in smaller case sizes. Their
high ripple current, high voltage rating and low ESR make
them ideal for switching regulator applications. Because the
LTC3550-1âs control loop does not depend on the output
capacitorâs ESR for stable operation, ceramic capacitors
can be used freely to achieve very low output ripple and
small circuit size.
When choosing the input and output ceramic capacitors,
choose the X5R or X7R dielectric formulations. These
dielectrics have the best temperature and voltage charac-
teristics of all the ceramics for a given value and size.
Efï¬ciency Considerations
The efï¬ciency of a switching regulator is equal to the output
power divided by the input power times 100%. It is often
useful to analyze individual losses to determine what is
limiting the efï¬ciency and which change would produce
the most improvement. Efï¬ciency can be expressed as:
Efï¬ciency = 100% â (L1 + L2 + L3 + ...)
where L1, L2, etc. are the individual losses as a percent-
age of input power.
Although all dissipative elements in the circuit produce
losses, two main sources usually account for most of
the losses in LTC3550-1 circuits: VCC quiescent current
and I2R losses. The VCC quiescent current loss dominates
the efï¬ciency loss at very low load currents whereas the
I2R loss dominates the efï¬ciency loss at medium to high
load currents. In a typical efï¬ciency plot, the efï¬ciency
curve at very low load currents can be misleading since
the actual power lost is of no consequence as illustrated
in Figure 3.
1. The VCC quiescent current is due to two components:
the DC bias current as given in the Electrical Charac-
teristics and the internal main switch and synchronous
switch gate charge currents. The gate charge current
results from switching the gate capacitance of the
internal power MOSFET switches. Each time the gate
is switched from high to low to high again, a packet of
charge, dQ, moves from VCC to ground. The resulting
dQ/dt is the current out of VCC that is typically larger
than the DC bias current. In continuous mode, IGATECHG
= f(QT + QB) where QT and QB are the gate charges of
the internal top and bottom switches. Both the DC bias
and gate charge losses are proportional to VCC and
thus their effects will be more pronounced at higher
supply voltages.
2. I2R losses are calculated from the resistances of the
internal switches, RSW, and external inductor RL. In
continuous mode, the average output current ï¬owing
through inductor L is âchoppedâ between the main
switch and the synchronous switch. Thus, the series
resistance looking into the SW pin is a function of both
top and bottom MOSFET RDS(ON) and the duty cycle
(DC) as follows:
RSW = (RDS(ON)TOP)(DC) + (RDS(ON)BOT)(1 â DC)
The RDS(ON) for both the top and bottom MOSFETs can
be obtained from the Typical Performance Characteristics
curves. Thus, to obtain I2R losses, simply add RSW to RL
and multiply the result by the square of the average output
current. Other losses including CIN and COUT ESR dissipa-
tive losses and inductor core losses generally account for
less than 2% total additional loss.
1
0.1
0.01
0.001
0.0001
0.00001
0.1
1
10
100
LOAD CURRENT (mA)
1000
3550-1 F03
Figure 3. Power Lost vs Load Current
35501f
17
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