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LTC6605-10_15 Datasheet, PDF (11/20 Pages) Linear Technology – Dual Matched 10MHz Filter with Low Noise, Low Distortion Differential Amplifier | |||
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LTC6605-10
APPLICATIONS INFORMATION
Setting the passband gain (GAIN = R2/R1) only requires
choosing a value for R1, since R2 is a ï¬xed internal 400Ω.
Therefore, the following three gains can be easily conï¬gured
without external components:
Table 1. Conï¬guring the Passband Gain Without External
Components
GAIN GAIN (dB) R1 (Ω)
(V/ V)
INPUT PINS TO USE
1
0
400 Drive the 400Ω Resistors. Tie
the 100Ω Resisters Together.
4
12
100 Drive the 100Ω Resistors.
5
14
80 Drive the 400Ω and 100Ω
Resistors in Parallel.
Figure 4 shows three filter configurations with an
fâ3dB = 9.7MHz, without any external components. These
ï¬lters have a Q = 0.61, which is an almost ideal Bessel
characteristic with linear phase.
Figure 5 shows three ï¬lter conï¬gurations that use some
external resistors, and are tailored for a very ï¬at ±0.7dB
11.2MHz passband.
Many other conï¬gurations are possible by using the equa-
tions in Figure 3. For example, external resistors can be
added to modify the value of R1 to conï¬gure GAIN â 1. For
an even more ï¬exible ï¬lter IC with similar performance,
consider the LTC6601.
The resonant frequency, fO, is independent of R1, and
therefore independent of the gain. For any LTC6605-10
ï¬lter conï¬guration that conforms to Figure 3, the fO is
ï¬xed at 11.36MHz. The fâ3dB frequency depends on the
combination of fO and Q. For any speciï¬c gain, Q is adjusted
by the selection of R4.
Setting the fâ3dB Frequency
Using an external resistor (REXT), the fâ3dB frequency is ad-
justable in the range of 9.7MHz to 14.0MHz (see Figure 3).
The minimum fâ3dB is set for REXT equal to 0Ω and the
maximum fâ3dB is arbitrarily set for a maximum passband
gain peak less than 1dB.
Table 2. REXT Selection GAIN = 1,
R1 = 400Ω, R4A = R4B = 100Ω
fâ3dB (MHz)
REXT Ω
9.7
0
10
5.11
10.5
13.3
11
22.1
11.5
31.6
12
41.2
12.5
52.3
13
64.9
13.5
80.6
14
97.6
BIAS Pin
Each channel of the LTC6605-10 has a BIAS pin whose
function is to tailor both performance and power. The BIAS
pin can be modeled as a voltage source whose potential
is 1.15V above the Vâ supply and that has a Thevenin
equivalent resistance of 150k. This three-state pin has ï¬xed
logic levels relative to Vâ (see the Electrical Characteristics
table), and can be driven by any external source that can
drive the BIAS pinâs equivalent input impedance.
If the BIAS pin is tied to the positive supply, the part is
in a fully active state conï¬gured for highest performance
(lowest noise and lowest distortion).
If the BIAS pin is ï¬oated (left unconnected), the part is in a
fully active state, but with ampliï¬er currents reduced and
performance scaled back to preserve power consumption.
Care should be taken to limit external leakage currents
to this pin to under 1μA to avoid putting the part in an
unexpected state.
If the BIAS pin is tied to the most negative supply (Vâ),
the part is in a low power shutdown mode with ampliï¬er
outputs disabled. In shutdown, all internal biasing current
sources are shut off, and the output pins each appear as
open collectors with a non-linear capacitor in parallel and
steering diodes to either supply. Because of the non-linear
capacitance, the outputs can still sink and source small
amounts of transient current if exposed to signiï¬cant
voltage transients. Using this function to wire-OR outputs
together is not recommended.
660510f
11
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