LTC4441_1 Datasheet, PDF (1/16 Pages) Linear Technology – N-Channel MOSFET Gate Driver Available in SO-8 and 10-Lead MSOP

Features
n _{6A Peak Output Current}
n _{Wide VIN Supply Range: 5V to 25V}
n _{Adjustable Gate Drive Voltage: 5V to 8V}
n _{Logic Input Can Be Driven Below Ground}
n _{30ns Propagation Delay}
n _{Supply Independent CMOS/TTL Input Thresholds}
n _{Undervoltage Lockout}
n _{Low Shutdown Current: <12µA}
n _{Overtemperature Protection}
n _{Adjustable Blanking Time for MOSFET’s}
Current Sense Signal (LTC4441)
n _{Available in SO-8 and 10-Lead MSOP}
(Exposed Pad) Packages
Applications
n _{Power Supplies}
n _{Motor/Relay Control}
n _{Line Drivers}
n _{Charge Pumps}
LTC4441/LTC4441-1
N-Channel MOSFET
Gate Driver
Description
The LTC^®4441/LTC4441-1 is an N-channel MOSFET gate
driver that can supply up to 6A of peak output current.
The chip is designed to operate with a supply voltage of
up to 25V and has an adjustable linear regulator for the
gate drive. The gate drive voltage can be programmed
between 5V and 8V.
The LTC4441/LTC4441-1 features a logic threshold driver
input. This input can be driven below ground or above the
driver supply. A dual function control input is provided to
disable the driver or to force the chip into shutdown mode
with <12µA of supply current. Undervoltage lockout and
overtemperature protection circuits will disable the driver
output when activated. The LTC4441 also comes with an
open-drain output that provides adjustable leading edge
blanking to prevent ringing when sensing the source cur-
rent of the power MOSFETs.
The LTC4441 is available in a thermally enhanced 10-lead
MSOP package. The LTC4441-1 is the SO-8 version without
the blanking function.
L, LT, LTC, LTM, Linear Technology and the Linear logo are registered trademarks of Linear
Technology Corporation. All other trademarks are the property of their respective owners.
Protected by U.S. Patents including 6677210.
Typical Application
V_IN
6V TO 24V
R5
SHUTDOWN Q2 R6
LTC3803
SWITCHING
CONTROLLER
GATE
SENSE⁺
GND
FB
R1
330k
R2
86.6k
V_IN
FB
DRV_CC
SGND
OUT
LTC4441
EN/SHDN
R7
RBLANK
PGND
IN
BLANK
L1
D1
10µH 20A ^MBR10100
+ 22µF
25V
X7R
+
C_OUT
C_VCC
10µF
X5R
Si7370
×2
R3
5mΩ
V_OUT
52V
2A
R4
100Ω
R8
511k
R9
8.06k
4441 TA01a
RISE/FALL Time vs C_LOAD
200
T_A = 25°C
180 DRV_CC = 5V
160
140
120
100
RISE TIME
80
60
40
FALL TIME
20
0
0 5 10 15 20 25 30 35 40 45 50
C_LOAD (nF)
4441 TA01b
44411fa
1