LTC4441 Datasheet, PDF (1/12 Pages) Linear Technology – N-Channel MOSFET Gate Driver

FEATURES
■ _{6A Peak Output Current}
■ _{Wide VIN Supply Range: 5V to 25V}
■ _{Adjustable Gate Drive Voltage: 5V to 8V}
■ _{Logic Input can be Driven Below Ground}
■ _{30ns Propagation Delay}
■ _{Supply Independent CMOS/TTL Input Thresholds}
■ _{Undervoltage Lockout}
■ _{Low Shutdown Current: <12µA}
■ _{Overtemperature Protection}
■ _{Adjustable Blanking Time for MOSFET’s}
Current Sense Signal (LTC4441)
■ _{Available in SO-8 and 10-Lead MSOP}
(Exposed Pad) Packages
U
APPLICATIO S
■ _{Power Supplies}
■ _{Motor/Relay Control}
■ _{Line Drivers}
■ _{Charge Pumps}
LTC4441/LTC4441-1
N-Channel MOSFET
Gate Driver
DESCRIPTIO
The LTC^®4441/LTC4441-1 is an N-channel MOSFET gate
driver that can supply up to 6A of peak output current. The
chip is designed to operate with a supply voltage of up to
25V and has an adjustable linear regulator for the gate
drive. The gate drive voltage can be programmed between
5V and 8V.
The LTC4441/LTC4441-1 features a logic threshold driver
input. This input can be driven below ground or above the
driver supply. A dual function control input is provided to
disable the driver or to force the chip into shutdown mode
with <12µA of supply current. Undervoltage lockout and
overtemperature protection circuits will disable the driver
output when activated. The LTC4441 also comes with an
open-drain output that provides adjustable leading edge
blanking to prevent ringing when sensing the source
current of the power MOSFETs.
The LTC4441 is available in a thermally enhanced 10-lead
MSOP package. The LTC4441-1 is the SO-8 version with-
out the blanking function.
, LTC and LT are registered trademarks of Linear Technology Corporation. All other
trademarks are the property of their respective owners. Protected by U.S. Patents
including 6677210.
TYPICAL APPLICATIO
V_IN
6V TO 24V
R5
SHUTDOWN Q2 R6
LTC3803
SWITCHING
CONTROLLER
GATE
SENSE⁺
R1
330k
R2
86.6k
V_IN
FB
DRV_CC
SGND
OUT
LTC4441
EN/SHDN
R7
RBLANK PGND
IN
BLANK
GND
FB
L1
D1
10µH 20A ^MBR10100
+ 22µF
25V
X7R
+
C_OUT
C_VCC
10µF
X5R
Si7370
×2
R3
5mΩ
V_OUT
52V
2A
R4
100Ω
R8
511k
R9
8.06k
4441 TA01
RISE/FALL Time vs C_LOAD
200
T_A = 25°C
180 DRV_CC = 5V
160
140
120
100
RISE TIME
80
60
40
FALL TIME
20
0
0 5 10 15 20 25 30 35 40 45 50
C_LOAD (nF)
4441 TA01b
44411f
1