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LTC1154 Datasheet, PDF (1/16 Pages) Linear Technology – High-Side Micropower MOSFET Driver
FEATURES
s Fully Enhances N-Channel Power MOSFETs
s 8µA IQ Standby Current
s 85µA IQ ON Current
s No External Charge Pump Capacitors
s 4.5V to 18V Supply Range
s Short-Circuit Protection
s Thermal Shutdown via PTC Thermistor
s Status Output Indicates Shutdown
s Available in 8-Pin SOIC
APPLICATI S
s Laptop Computer Power Switching
s SCSI Termination Power Switching
s Cellular Telephone Power Management
s Battery Charging and Management
s High-Side Industrial and Automotive Switching
s Stepper Motor and DC Motor Control
LTC1154
High-Side Micropower
MOSFET Driver
DESCRIPTIO
The LTC1154 single high-side gate driver allows using low
cost N-channel FETs for high-side switching applications.
An internal charge pump boosts the gate drive voltage
above the positive rail, fully enhancing an N-channel MOS
switch with no external components. Micropower opera-
tion, with 8µA standby current and 85µA operating cur-
rent, allows use in virtually all systems with maximum
efficiency.
Included on chip is programmable over-current sensing.
A time delay can be added to prevent false triggering on
high in-rush current loads. An active high shutdown input
is also provided and interfaces directly to a standard PTC
thermistor for thermal shutdown. An open-drain output is
provided to report switch status to the µP. An active low
enable input is provided to control multiple switches in
banks.
The LTC1154 is available in both 8-pin DIP and 8-pin SOIC
packages.
TYPICAL APPLICATI
5V
µP
Ultra-Low Voltage Drop High-Side Switch
with Short-Circuit Protection
51k
IN
VS
EN
DS
LTC1154
STATUS
G
0.036Ω*
0.1µF**
200k**
2.7A MAX
IRLR024
GND
SD
5V
LOAD
ALL COMPONENTS SHOWN ARE SURFACE MOUNT.
* IMS026 INTERNATIONAL MANUFACTURING SERVICE, INC. (401) 683-9700
** NOT REQUIRED IF LOAD IS RESISTIVE OR INDUCTIVE.
LTC1154 • TA01
Standby Supply Current
50
45
VIN = 0V
TJ = 25°C
40
35
30
25
20
15
10
5
0
0
5
10
15
20
SUPPLY VOLTAGE (V)
LTC1153 • TA02
1