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LT1336 Datasheet, PDF (1/16 Pages) Linear Technology – Half-Bridge N-Channel Power MOSFET Driver with Boost Regulator
FEATURES
s Floating Top Driver Switches Up to 60V
s Internal Boost Regulator for DC Operation
s Drives Gate of Top N-Channel MOSFET
above Supply
s 180ns Transition Times Driving 10,000pF
s Adaptive Nonoverlapping Gate Drives Prevent
Shoot-Through
s Top Drive Maintained at High Duty Cycles
s TTL/CMOS Input Levels
s Undervoltage Lockout with Hysteresis
s Operates at Supply Voltages from 10V to 15V
s Separate Top and Bottom Drive Pins
U
APPLICATIONS
s PWM of High Current Inductive Loads
s Half-Bridge and Full-Bridge Motor Control
s Synchronous Step-Down Switching Regulators
s 3-Phase Brushless Motor Drive
s High Current Transducer Drivers
s Class D Power Amplifiers
LT1336
Half-Bridge N-Channel
Power MOSFET Driver
with Boost Regulator
DESCRIPTION
The LT®1336 is a cost effective half-bridge N-channel
power MOSFET driver. The floating driver can drive the
topside N-channel power MOSFETs operating off a high
voltage (HV) rail of up to 60V (absolute maximum). In
PWM operation an on-chip switching regulator maintains
charge in the bootstrap capacitor even when approaching
and operating at 100% duty cycle.
The internal logic prevents the inputs from turning on the
power MOSFETs in a half-bridge at the same time. Its
unique adaptive protection against shoot-through cur-
rents eliminates all matching requirements for the two
MOSFETs. This greatly eases the design of high efficiency
motor control and switching regulator systems.
During low supply or start-up conditions, the undervoltage
lockout actively pulls the driver outputs low to prevent the
power MOSFETs from being partially turned on. The 0.5V
hysteresis allows reliable operation even with slowly vary-
ing supplies.
, LTC and LT are registered trademarks of Linear Technology Corporation.
TYPICAL APPLICATION
12V
1N4148
200µH*
RSENSE
2Ω
1/4W
2
1
ISENSE
SV+
16
SWITCH
14
BOOST
+ 10µF
25V
10 PV+
13
TGATEDR
LT1336
12
TGATEFB
5
UVOUT
11
TSOURCE
3
INTOP
9
BGATEDR
4
8
INBOTTOM BGATEFB
PWM
0Hz TO 100kHz
SGND SWGND PGND
6
15
7
1N4148
HV = 40V MAX**
+ CBOOST
1µF
+
IRFZ44
1000µF
100V
INTOP INBOTTOM TGATEDR BGATEDR
IRFZ44
L
L
L
L
L
H
L
H
H
L
H
L
H
H
L
L
*SUMIDA RCR-664D-221KC
**FOR HV > 40V SEE “DERIVING THE FLOATING
SUPPLY WITH THE FLYBACK TOPOLOGY” IN
APPLICATIONS INFORMATION SECTION
1336 TA01
1