LT1001CN8 Datasheet, PDF (4/16 Pages) Linear Dimensions Semiconductor – Precision Operational Amplifier

LT1001
TYPICAL PERFORMANCE CHARACTERISTICS
Typical Distribution of Offset
Voltage Drift with Temperature
100
265 UNITS
80
TESTED
60
40
20
–1.0 –0.6 –0.2 0 +0.2 +0.6 +1.0
OFFSET VOLTAGE DRIFT (µV/°C)
1001 G01
Offset Voltage Drift withTemperature
of Representative Units
50
40
30 ^{VS = ±15V}
LT1001
20
LT1001A
10
0
LT1001A
–10
–20
LT1001
–30
–40
–50
–50 –25
0 25 50 75 100 125
TEMPERATURE (°C)
1001 G02
0.1Hz to 10Hz Noise
Noise Spectrum
100
10
T_A = 25°C
V_S = ±3 TO ±18V
30
1/f CORNER
3
4Hz
VOLTAGE
10
1.0
0
2
4
6
8
10
TIME (SECONDS)
1001 G04
Input Bias and Offset Current
vs Temperature
1.4
1.2
V_S = ±15V
1.0
0.8
0.6
BIAS CURRENT
0.4
0.2
OFFSET CURRENT
–50 –25
0 25 50 75
TEMPERATURE (°C)
100 125
1001 G07
1/f CORNER
3
70Hz
0.3
CURRENT
1
0.1
1
10
100
1000
FREQUENCY (Hz)
1001 G05
Input Bias Current
Over the Common Mode Range
1.5
–
1.0
Ib +
VCM
0.5 _{DEVICE WITH POSITIVE INPUT CURRENT}
0
V_S = ±15V
T_A = 25°C
–.5
DEVICE WITH NEGATIVE INPUT CURRENT
–1.0
–1.5
–15
COMMON MODE
INPUT RESISTANCE
=
28V
0.1nA
=
280GΩ
–10 –5
0
5
10 15
COMMON MODE INPUT VOLTAGE
1001 G08
4
Warm-Up Drift
4
V_S = ±15V
T_A = 25°C
3
METAL CAN (H) PACKAGE
2
DUAL-IN-LINE PACKAGE
1
PLASTIC (N) OR CERDIP (J)
0
1
2
3
4
5
TIME AFTER POWER ON (MINUTES)
1001 G03
Long Term Stability of Four
Representative Units
10
5
0
–5
–10
0
1
2
3
4
5
TIME (MONTHS)
1001 G06
Input Bias Current vs
Differential Input Voltage
30
V_S = ±15V
T_A = 25°C
20
10
I_B ≈ 1 nA to V_DIFF = 0.7V
0
0.1 0.3
1.0 3.0
10
30
± DIFFERENTIAL INPUT (V)
1001 G09
1001fb