LND090A Datasheet, PDF (1/2 Pages) Linear Dimensions Semiconductor – Revolutionary LF-MCTs Replace MOSFETs, Bipolars & IGBTs In Switching Apps with only 1.9nC Gate Charge

PRELIMINARY DATA SHEET
D
LND090A/B/C/D
Revolutionary LF-MCTs Replace
MOSFETs, Bipolars & IGBTs In Switching
Apps with only 1.9nC Gate Charge
GENERAL DESCRIPTION
FEATURES
Linear Dimensions introduces the revolutionary Linear Fast
MCT (LF-MCT). A Linear Dimensions proprietary MCT
construction (PATENTS PENDING) allows LF-MCTs for the
first time to be used in fast switching applications where
MOSFETs, bipolars & IGBTs are more commonly used.
LF-MCTs represent the highest current density of any
switching pass element. In the past MCTs have had
switching times in the 800ns+ range and been focused on
high current applications. Linear Dimensions brings LF-
MCTs to high frequency offline AC/DC and DC/DC switching
applications with turn on times of <30ns and turn off times of
<200ns (600V devices).
In AC/DC offline applications such as offline flyback
converters or switching LED drivers, LF-MCTs require 1/3 the
drive current of the MOSFETs typically used. Additionally,
LF-MCTs require 1/3 to 1/8^th the silicon area of a MOSFET
for a similar voltage drop at rated current saving space and
cost.
Fast LF-MCTs can be used as a replacement for IGBTs
where they have a Vf that is as much as 40% lower than a
typical IGBTs.
 600V/1500V anode to cathode voltage
 Off leakage 30% of equivalent MOSFET
 High impedance MOSFET-like gate
 Vg=+/- 5V gate drive, pulsed OK
 Turn off current:
 1A & 3A LF-MCTs (A,B)
 10A & 40A LF-MCTs (C,D)
 Low gate capacitance ~ 380pF
 Ultra fast rise times ~ 17ns
 Sub ~200ns fall times
 Silicon area reduced to as little as 30% of the
silicon of a MOSFET with equivalent Vf
 Up to 10x the peak current capability of an
equivalent MOSFET
 >40% lower forward Vf drop than IGBTs (1.3-1.6V
vs. ~2.2V for IGBT)
 High current density >> 300 Amp Peak
 Lead free RoHS compliant TO-252 PKG
 Also available as bare die
Although Fast LF-MCTs must be driven with a +/- gate
voltage, the small current requirement allows the negative
voltage to be generated from the output of a typical switching
gate drive. Additionally, a positive or negative pulse will latch
them on or off and a continuous voltage is not required.
The LND090 are packaged in lead free TO-252 packages or
available as bare die.
PASS ELEMENT CURRENT DENSITY
DENSITY _{COMPARISON OF 600V DEVICES WITH}
LESS THAN 1 us TURN-OFF TIME
1000
N- M C T
P- M C T
N- IG BT
100
DARLINGTON
10
N- M O SFET
1.0
0
TEMPERATURE: 25C
CELL SIZE: 35 um
0.5
1.0
1.5
2.0
2.5
FORWARD DROP (VOLTS)
Modelled Forwa rd Drop Compa rison
of MOS Ga ted Power Devices
APPLICATIONS
 Crowbar protection circuits
 High-voltage surge suppressors
 Uninterruptible Power Supplies
 Capacitor discharge safety switches
 White Goods, Rice Cookers
 AC/DC Flyback Converters
 DC/DC Switching Applications
 Resonant switching
 Plasma Televisions
 Camera Strobe
PACKAGE & SYMBOL
A
A
G
K
D-Pak
G
K
LF-MCT