J174 Datasheet, PDF (2/2 Pages) NXP Semiconductors – P-channel silicon field-effect transistors

SWITCHING CHARACTERISTICS
SYMBOL CHARACTERISTIC TYP
t_d(on)
Turn On Time
10
t_r
Turn On Rise Time 15
t_d(off)
Turn Off Time
10
t_f
Turn Off Fall Time 20
UNITS
ns
CONDITIONS
V_GS(L) = 0V
V_GS(H) = 10V
See Switching
Circuit
SWITCHING CIRCUIT PARAMETERS
J/SST174 J/SST175 J/SST176
V_DD
V_GG
R_L
R_G
I_D(on)
-10V
20V
560Ω
100Ω
-15mA
-6V
12V
750Ω
220Ω
-7mA
-6V
8V
1800Ω
390Ω
-3mA
J/SST177
-6V
5V
5600Ω
390Ω
-1mA
SWITCHING CIRCUIT
V_GS(H)
V_GS(L)
1.2kΩ
R_L
0.1µF
R_G
51Ω
1.2kΩ
51Ω
Scope
7.5kΩ
51Ω
TO-92
0.175
0.195
0.170
LS XXX
0.195
YYWW
0.130
0.155
0.045
0.060
0.500
0.610
0.016
0.022
0.014
0.020
1
2
3
0.095
0.105
0.045
0.055
DIMENSIONS
IN INCHES.
SOT-23
0.89
1.03
1
1.78
2.05
2
0.37
0.51
3
2.80
3.04
1.20
1.40
0.89
2.10
1.12
2.64
0.085
0.180
0.013
0.100
0.55
DIMENSIONS IN
MILLIMETERS
1. Absolute maximum ratings are limiting values above which serviceability may be impaired.
2. Pulsed test: P_W ≤ 300µS Duty Cycle: 3%
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