U440 Datasheet, PDF (1/2 Pages) Calogic, LLC – N-Channel JFET Monolithic Dual

U/SST440,441
Linear Integrated Systems
FEATURES
Direct Replacement for SILICONIX U/SST440 & U/SST441
HIGH CMRR
CMRR ≥ 85dB
LOW GATE LEAKAGE
ABSOLUTE MAXIMUM RATINGS¹
I_GSS ≤ 1pA
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-65 to +150 °C
Operating Junction Temperature
-55 to +135 °C
Maximum Power Dissipation
Continuous Power Dissipation (Total)
500mW
Maximum Currents
Gate Current
50mA
Maximum Voltages
Gate to Drain
-25V
Gate to Source
-25V
Gate to Gate
±50V
MONOLITHIC DUAL
N-CHANNEL JFET
U SERIES
TO-71
BOTTOM VIEW
G1 3
D1 2
S1 1
5 S2
6 D2
7 G2
SST SERIES
SOIC
S1 1
D1 2
G1 3
NC 4
8 NC
7 G2
6 D2
5 S2
MATCHING CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL CHARACTERISTIC
MIN TYP MAX UNITS
VGS1 − VGS2 ^{Differential Gate to}
Source Cutoff Voltage
U/SST440
U/SST441
10
mV
20
∆ VGS1 − VGS2
∆T
I DSS1
IDSS2
g fs1
gfs2
Differential Gate to Source Cutoff
Voltage Change with Temperature
Gate to Source Saturation Current Ratio
Forward Transconductance Ratio²
20
0.07
0.97
µV/°C
CMRR Common Mode Rejection Ratio
85
dB
CONDITIONS
V_DG = 10V, I_D = 5mA
V_DG = 10V, I_D = 5mA
T_A = -55 to +125°C
V_DS = 10V, V_GS = 0V
V_DS = 10V, I_D = 5mA, f = 1kHz
V_DG = 5 to 10V, I_D = 5mA
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL CHARACTERISTIC
MIN TYP MAX UNITS
BV_GSS
V_GS(off)
I_DSS
I_GSS
I_G
Gate to Source Breakdown Voltage
Gate to Source Cutoff Voltage
Gate to Source Saturation Current³
Gate Leakage Current
Gate Operating Current
-25
V
-1 -3.5 -6
V
6 15 30 mA
-1 -500
pA
-1 -500
CONDITIONS
I_G = -1µA, V_DS = 0V
V_DS = 10V, I_D = 1nA
V_DS = 10V, V_GS = 0V
V_GS = -15V, V_DS = 0V
V_DG = 10V, I_D = 5mA
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: [phone] • Fax: [phone]