U401_15 Datasheet, PDF (1/2 Pages) Linear Integrated Systems – LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER

SST/U401 – SST/U406
LOW NOISE LOW DRIFT
MONOLITHIC DUAL N-CHANNEL
JFET AMPLIFIER
FEATURES
LOW DRIFT
│VGS1-2/T│= 10µV/ºC TYP.
LOW NOISE
en=6nV/Hz@10Hz TYP.
LOW PINCHOFF
VP=2.5V MAX.
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25 °C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
-55 to +150°C
Operating Junction Temperature
-55 to +150°C
Maximum Voltage and Current for Each Transistor NOTE 1
-VGSS
Gate Voltage to Drain or Source 50V
-VDSO
Drain to Source Voltage
50V
-IG(f)
Gate Forward Current
10mA
Maximum Power Dissipation per side NOTE 2
Device Dissipation TA = 25°C
300mW
TO-71
Top View
SOIC
Top View
MATCHING CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
U401 U402 U403 U404
│VGS1-2/T│max. Drift vs. Temperature
10 10 25 25
│VGS1-2│max.
Offset Voltage
5
10 10 15
U405
40
20
U406 UNITS
80 µV/ºC
40 mV
CONDITIONS
VDG = 10V, ID = 200µA
TA = -55ºC to +125ºC
VDG = 10V, ID = 200µA
ELECTRICAL CHARACTERISTICS TA = 25ºC (unless otherwise noted) NOTE 3
SYMBOL
CHARACTERISTIC
MIN. TYP. MAX. UNITS
BVGSS
BVG1G2
Gfss
Gfs
│Gfs1/Gfs2│
IDSS
Breakdown Voltage
Gate-to-Gate Breakdown
TRANSCONDUCTANCE
Full Conduction
Typical Operation
Mismatch
Saturation Drain Current
-50 -60 --
V
±50
--
--
V
2000 -- 7000 µS
1000 -- 2000 µS
0.97
--
1.0
0.5
--
10 mA
IDSS1
IDSS2
Saturation Current Ratio
0.9 0.98 1.0
VGS(off) or VP
VGS
IG
IG
IGSS
IG1G2
GATE VOLTAGE
Pinchoff Voltage
-0.5
Operating Range
--
GATE CURRENT
Operating
--
High Temperature
--
Gate Reverse Current
--
Gate to Gate Isolation Current --
-- -2.5 V
-- -2.3 V
-4 -15 pA
-- -10 nA
-- -100 pA
-- ±1.0 µA
CONDITIONS
VDS= 0
ID= 1nA
IG= ±1µA
ID= 0,
IS = 0
VDG= 10V
VDG= 15V
VGS= 0 f = 1kHz
ID= 200µA f = 1kHz
VDG= 10V
VGS= 0
VDS= 15V
VDS= 15V
ID= 1nA
ID= 200µA
VDG= 15V
ID= 200µA
TA=+125ºC
VGS=-30v, VDS= 0V
VG1-VG2= ±50V, ID= IS= 0
Linear Integrated Systems
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Doc 201123 03/18/2015 Rev#A8 ECN# SST/U401 SST/U406