U308_14 Datasheet, PDF (1/2 Pages) Linear Integrated Systems – SINGLE N-CHANNEL HIGH FREQUENCY JFET AMPLIFIER

U/J/SST308 SERIES
SINGLE N-CHANNEL
HIGH FREQUENCY
JFET AMPLIFIER
FEATURES
Direct Replacement For SILICONIX U/J/SST308 SERIES
OUTSTANDING HIGH FREQUENCY GAIN Gpg = 11.5dB
LOW HIGH FREQUENCY NOISE
NF = 2.7dB
ABSOLUTE MAXIMUM RATINGS¹
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-55 to 150°C
Junction Operating Temperature
-55 to 150°C
Maximum Power Dissipation
Continuous Power Dissipation (J/SST)⁴
350mW
Continuous Power Dissipation (U)⁵
500mW
Maximum Currents
Gate Current (J/SST)
10mA
Gate Current (U)
20mA
Maximum Voltages
Gate to Drain
-25V
Gate to Source
-25V
U SERIES
TO-18
T_TO_OP_{P V}V_II_EE_WW
J SERIES
TO-92
TOP VIEW
SST SERIES
S_SO_OT_T-_-2₂₃3
TO_TOP_PV_VI_IE_EWW
D1
S2
3_G
COMMON ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL CHARACTERISTIC
MIN TYP MAX UNIT
BVGSS
Gate to Source Breakdown Voltage
-25
VGS(F)
Gate to Source Forward Voltage
0.7
V
1.15
IG
Gate Operating Current
-15
pA
rDS(on)
Drain to Source On Resistance
35
Ω
en
Equivalent Noise Voltage
6
nV/√Hz
NF
Noise Figure
Gpg
Power Gain²
f = 105MHz
1.5
f = 450MHz
2.7
dB
f = 105MHz
16
f = 450MHz
11.5
gfg
gog
IGSS
Forward
Transconductance
Output Conductance
Gate Reverse Current
f = 105MHz
f = 450MHz
f = 105MHz
f = 450MHz
14
13
mS
0.16
0.55
-1 nA
CONDITIONS
IG = -1µA, VDS = 0V
IG = 10mA, VDS = 0V
VDG = 9V, ID = 10mA
VGS = 0V, ID = 1mA
VDS = 10V, ID = 10mA, f = 100Hz
VDS = 10V, ID = 10mA
VGS = -15V, VDS = 0V
Linear Integrated Systems
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Doc 201117 05/09/14 Rev#A6 ECN# U/J/SST 308