U308 Datasheet, PDF (1/2 Pages) Calogic, LLC – N-Channel JFET High Frequency Amplifier

Linear Integrated Systems
U/J/SST308
SERIES
SINGLE N-CHANNEL HIGH
FREQUENCY JFET
FEATURES
Direct Replacement For SILICONIX U/J/SST308 SERIES
OUTSTANDING HIGH FREQUENCY GAIN
LOW HIGH FREQUENCY NOISE
ABSOLUTE MAXIMUM RATINGS¹
G_pg = 11.5dB
NF = 2.7dB
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-55 to 150°C
Junction Operating Temperature
-55 to 135°C
Maximum Power Dissipation
Continuous Power Dissipation (J/SST)
350mW
Continuous Power Dissipation (U)
500mW
Maximum Currents
Gate Current (J/SST)
10mA
Gate Current (U)
20mA
Maximum Voltages
Gate to Drain
-25V
Gate to Source
-25V
TO-18
BOTTOM VIEW
D 2 3G
S1
J SERIES
TO-92
BOTTOM VIEW
DSG
123
SST SERIES
SOT-23
TOP VIEW
D1
S2
3_G
COMMON ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL CHARACTERISTIC
MIN TYP MAX UNIT
BV_GSS
V_GS(F)
I_G
r_DS(on)
e_n
NF
G_pg
g_fg
g_og
Gate to Source Breakdown Voltage
-25
Gate to Source Forward Voltage
0.7
Gate Operating Current
-15
Drain to Source On Resistance
35
Equivalent Noise Voltage
6
Noise Figure
f = 105MHz
1.5
f = 450MHz
2.7
Power Gain²
f = 105MHz
16
f = 450MHz
11.5
Forward
f = 105MHz
14
Transconductance
f = 450MHz
13
f = 105MHz
0.16
Output Conductance
f = 450MHz
0.55
V
1
pA
Ω
nV/√Hz
dB
mS
CONDITIONS
I_G = -1µA, V_DS = 0V
I_G = 10mA, V_DS = 0V
V_DG = 9V, I_D = 10mA
V_GS = 0V, I_D = 1mA
V_DS = 10V, I_D = 10mA, f = 100Hz
V_DS = 10V, I_D = 10mA
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