LSK389_14 Datasheet, PDF (1/2 Pages) Linear Integrated Systems – ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER

LSK389
ULTRA LOW NOISE
MONOLITHIC DUAL
N-CHANNEL JFET AMPLIFIER
FEATURES
ULTRA LOW NOISE
TIGHT MATCHING
HIGH BREAKDOWN VOLTAGE
en = 0.9nV/√Hz (typ)
IVGS1-2I = 20mV max
BVGSS = 40V max
HIGH GAIN
Gfs = 20mS (typ)
LOW CAPACITANCE
25pF typ
IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK389
ABSOLUTE MAXIMUM RATINGS¹
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-65 to +150°C
Junction Operating Temperature
-55 to +135°C
Maximum Power Dissipation
Continuous Power Dissipation @ +25°C
400mW
Maximum Currents
Gate Forward Current
IG(F) = 10mA
Maximum Voltages
Gate to Source
VGSS = 40V
Gate to Drain
VGDS = 40V
TO-71
Top View
SOIC-A
Top View
* For equivalent single version, see LSK170 family
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)
SYMBOL CHARACTERISTIC
MIN TYP MAX UNITS
VGS1  VGS2 ^{Differential Gate to Source Cutoff}
Voltage
20
mV
ID SS1
Gate to Source Saturation Current Ratio 0.9
---
ID SS2
CONDITIONS
VDS = 10V, ID = 1mA
VDS = 10V, VGS = 0V
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise stated)
SYMBOL CHARACTERISTIC
MIN TYP MAX UNITS
BVGSS
Gate to Source Breakdown Voltage
-40
V
VGS(OFF) Gate to Source Pinch-off Voltage
-0.15
-2
V
LSK389A 2.6
6.5
IDSS
Drain to Source Saturation ^{LSK389B 6}
Current
LSK389C 10
12
mA
20
LSK389D 17
30
IGSS
Gate to Source Leakage Current
-200 pA
IG1G2
Gate to Gate Isolation Current
±1.0 µA
CONDITIONS
VDS = 0, ID = -100µA
VDS = 10V, ID = 0.1µA
VDS = 10V, VGS = 0
VGS = -30V, VDS = 0
VG1-G2 = ±45V, ID = IS = 0A
Note: All MIN/TYP/MAX limits are absolute numbers. Negative signs indicate electrical polarity only.
Linear Integrated Systems
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Doc 201122 5/02/2014 Rev#A7 ECN# LSK389