LSK389 Datasheet, PDF (1/2 Pages) Siemens Semiconductor Group – LC ARGUS LED Low current 3 mm T1 LED, Non Diffused

Linear Integrated Systems
FEATURES
ULTRA LOW NOISE
TIGHT MATCHING
e_n = 0.9nV/√Hz (typ)
|V_GS1-2| = 20mV max
HIGH BREAKDOWN VOLTAGE
BV_GSS = 40V max
HIGH GAIN
Y_fs = 20mS (typ)
LOW CAPACITANCE
25pF typ
IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK389
ABSOLUTE MAXIMUM RATINGS¹
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
-65 to +150 °C
-55 to +135 °C
Maximum Power Dissipation
Continuous Power Dissipation @ +125 °C
400mW
Maximum Currents
Gate Forward Current
Maximum Voltages
I_G(F) = 10mA
Gate to Source
Gate to Drain
V_GSS = 40V
V_GDS = 40V
LSK389
ULTRA LOW NOISE
MONOLITHIC DUAL
N-CHANNEL JFET
TO-71
BOTTOM VIEW
G1 3
D1 2
S1 1
5 S2
6 D2
7 G2
SOIC-A
S1 1
D1 2
SS 3
G1 4
8 G2
7 SS
6 D2
5 S2
*For equivalent single version, see LSK170 family.
MATCHING CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL CHARACTERISTIC
MIN TYP MAX
VGS1 − VGS2
Differential Gate to Source Cutoff
Voltage
20
I DSS1
Gate to Source Saturation Current Ratio 0.9
IDSS2
UNIT
mV
-
CONDITIONS
V_DS = 10V, I_D = 1mA
V_DS = 10V, V_GS = 0V
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL CHARACTERISTIC
MIN TYP MAX UNITS
BV_GSS
Gate to Source Breakdown Voltage
40
V
V_GS(OFF) Gate to Source Pinch-off Voltage
0.15
2
V
LSK389A 2.6
I_DSS
Drain to Source Saturation
Current
LSK389B
6
LSK389C 10
6.5
12 mA
20
I_GSS
Gate to Source Leakage Current
200 pA
CONDITIONS
V_DS = 0, I_D = 100µA
V_DS = 10V, I_D = 0.1µA
V_DS = 10V, V_GS = 0
V_GS = -30V, V_DS = 0
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