LSK170_14 Datasheet, PDF (1/2 Pages) Linear Integrated Systems – ULTRA LOW NOISE SINGLE N-CHANNEL JFET AMPLIFIER

LSK170
ULTRA LOW NOISE
SINGLE N-CHANNEL
JFET AMPLIFIER
FEATURES
ULTRA LOW NOISE (f=1kHz)
en = 0.9NV/√HZ
HIGH BREAKDOWN VOLTAGE
BVGSS=40V max
HIGH GAIN
Yfs=22mS (typ)
HIGH INPUT IMPEDENCE
IG= -500pA max
LOW CAPACITANCE
22pF max
IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK170
ABSOLUTE MAXIMUM RATINGS¹
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-55 to +150 °C
Operating Junction Temperature
-55 to +135 °C
Maximum Power Dissipation
Continuous Power Dissipation@+25°C
400mW
Maximum Currents
Gate Forward Current
IG(F)= 10mA
Maximum Voltages
Gate to Source
VGSS = 40V
Gate to Drain
VGDS = 40V
TO-92
TOP VIEW
SOT-23
TOP VIEW
*For equivalent monolithic dual, see LSK389 family.
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL CHARACTERISTIC
MIN TYP MAX UNITS
BVGSS
Gate to Source Breakdown Voltage
-40
V
VGS(OFF) Gate to Source Pinch-off Voltage
-0.2
-2
V
VGS
Gate to Source Operating Voltage
0.5
V
LSK170A 2.6
6.5
IDSS
Drain to Source
Saturation Current
LSK170B
6
LSK170C 10
12
20 ^mA
LSK170D 18
30
IG
Gate Operating Current
-0.5 nA
IGSS
Gate to Source Leakage Current
GfS
Full Conduction Transconductance
-1 nA
22
mS
GfS
Typical Conduction Transconductance
10
mS
en
Noise Voltage
0.9 1.9 nV/√Hz
en
CISS
CRSS
Noise Voltage
Common Source Input Capacitance
Common Source Reverse Transfer Cap.
2.5 4 nV/√Hz
20
pF
5
pF
CONDITIONS
VDS = 0, ID = 100µA
VDS = 10V, ID = 1nA
VDS = 10V, ID = 1mA
VGS = 10V, VGS = 0
VDG = 10V, ID = 1mA
VGS = -10V, VDS = 0
VGD = 10V, VGS = 0, f = 1kHz
VDG = 15V, ID = 1mA
VDS = 10V,
NBW=1Hz
VDS = 10V,
NBW=1Hz
ID = 2mA, f = 1kHz,
ID = 2mA, f = 10 Hz,
VDS = 15V, ID = 100µA, f = 1MHz
Linear Integrated Systems
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Doc 201110 05/20/2014 Rev#A15 ECN# LSK170