LSK170 Datasheet, PDF (1/1 Pages) Linear Integrated Systems – ULTRA LOW NOISE SINGLE N-CHANNEL JFET

LSK170
Linear Integrated Systems
FEATURES
ULTRA LOW NOISE (f = 1kHz)
HIGH BREAKDOWN VOLTAGE
HIGH GAIN
HIGH INPUT IMPEDANCE
LOW CAPACITANCE
e_n = 0.9nV/√Hz
BV_GSS = 40V max
Y_fs = 22mS (typ)
I_G = -500pA max
22pF max
IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK170
ABSOLUTE MAXIMUM RATINGS¹
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-65 to +150 °C
Operating Junction Temperature
-55 to +135 °C
Maximum Power Dissipation
Continuous Power Dissipation @ +125 °C
400mW
Maximum Currents
Gate Forward Current
Maximum Voltages
I_G(F) = 10mA
Gate to Source
V_GSS = 40V
Gate to Drain
V_GDS = 40V
ULTRA LOW NOISE
SINGLE N-CHANNEL JFET
TO-92
BOTTOM VIEW
DGS
123
SOT-23
TOP VIEW
D¹
S²
3_G
*For equivalent monolithic dual, see LSK389 family.
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL CHARACTERISTIC
MIN TYP MAX UNITS
BV_GSS
Gate to Source Breakdown Voltage
40
V
V_GS(OFF) Gate to Source Pinch-off Voltage
0.2
2
V
V_GS
Gate to Source Operating Voltage
0.5
V
LSK170A 2.6
I_DSS
Drain to Source Saturation
Current
LSK170B
6
LSK170C 10
6.5
12 mA
20
I_G
Gate Operating Current
I_GSS
Gate to Source Leakage Current
Y_fss
Full Conduction Transconductance
Y_fs
Typical Conduction Transconductance
0.5 nA
1
nA
22
mS
10
mS
e_n
Noise Voltage
0.9 1.9 nV/√Hz
CONDITIONS
V_DS = 0, I_D = 100µA
V_DS = 10V, I_D = 1nA
V_DS = 10V, I_D = 1mA
V_DG = 10V, V_GS = 0
V_DG = 10V, I_D = 1mA
V_DG = 10V, V_DS = 0
V_GD = 10V, V_GS = 0, f = 1kHz
V_DG = 15V, I_D = 1mA
V_DS = 10V, I_D = 2mA, f = 1kHz,
NBW = 1Hz
e_n
Noise Voltage
2.5
4
nV/√Hz
V_DS = 10V, I_D = 2mA, f = 10Hz,
NBW = 1Hz
C_ISS
Common Source Input Capacitance
20
C_RSS
Common Source Reverse Transfer Cap.
5
pF
V_DS = 15V, I_D = 500µA
pF
1. Absolute maximum ratings are limiting values above which serviceability may be impaired.
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