LSJ74_14 Datasheet, PDF (1/2 Pages) Linear Integrated Systems – ULTRA LOW NOISE SINGLE P-CHANNEL JFET

LSJ74, SST74
ULTRA LOW NOISE
SINGLE P-CHANNEL JFET
FEATURES
ULTRA LOW NOISE (f = 1kHz)
en = 0.9nV/√Hz
HIGH GAIN
Gfs = 22mS (typ)
HIGH INPUT IMPEDANCE
IG = 1.0nA
LOW CAPACITANCE
CRSS = 32pF
IMPROVED SECOND SOURCE REPLACEMENT FOR 2SJ74
ABSOLUTE MAXIMUM RATINGS¹
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
Junction Operating Temperature
Maximum Power Dissipation
Continuous Power Dissipation
Maximum Currents
Gate Forward Current
Maximum Voltages
Gate to Drain Voltage
Gate to Source Voltage
-55 to +150°C
-55 to +135°C
400mW
IG(F) = -10mA
VGDS = 25V
VGSS = 25V
TO 92
TOP VIEW
SOT-89
TOP VIEW
* For equivalent N-Channel, see LSK170 family.
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
MIN TYP MAX
BVGDS Gate to Drain Breakdown Voltage
25
VGS(OFF) Gate to Source Pinch-off Voltage
0.15
2
LSJ74A -2.6
-6.5
IDSS
Drain to Source Saturation ^{LSJ74B -6}
Current²
LSJ74C -10
-12
-20
LSJ74D -17
-30
IG
Gate Operating Current
50
IGSS
Gate to Source Leakage Current
1
Gfss
Full Conductance Transconductance
8 22
UNITS
V
mA
pA
nA
mS
en
Noise Voltage
0.9 1.9
nV/√Hz
2.5 4
CISS
Common Source Input Capacitance
105
pF
CRSS
Common Source Reverse Transfer Cap.
32
CONDITIONS
VDS = 0V, IG = 100µA
VDS = -10V, ID = -0.1µA
VDG = -10V, VGS = 0V
VDG = -10V, ID = -1mA
VGS = 25V, VDS = 0V
VDG = -10V, VGS = 0V, f = 1kHz
VDS = -10V, ID = -2mA, f = 1kHz,
NBW = 1Hz
VDS = -10V, ID = -2mA, f = 10kHz,
NBW = 1Hz
VDS = -10V, VGS = 0V, f = 1MHz
VDS = -10V, ID = 0A, f = 1MHz
Linear Integrated Systems
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Doc 201175 06/26/2014 Rev#A4 ECN# LSJ74