LS846_14 Datasheet, PDF (1/2 Pages) Linear Integrated Systems – LOW NOISE LOW LEAKAGE SINGLE N-CHANNEL JFET AMPLIFIER

LS846
LOW NOISE LOW LEAKAGE
SINGLE N-CHANNEL
JFET AMPLIFIER
FEATURES
ULTRA LOW NOISE
LOW INPUT CAPACITANCE
ABSOLUTE MAXIMUM RATINGS¹
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation TA=25°C
Maximum Currents
Gate Forward Current
Maximum Voltages
Gate to Source
Gate to Drain
en = 3nV/√Hz
CISS = 4pF
-55 to +150°C
-55 to +150°C
300mW³
IG(F) = 10mA
VGSO = 60V
VGDO = 60V
TO-72
TOP VIEW
TO-92
TOP VIEW
SOT-23
TOP VIEW
SOT-23
TOP VIEW
D1
S2
3_G
*For equivalent Monolithic Dual, see LS843 Family
SYMBOL
BVGSS
VGS(OFF)
VGS
IDSS
IG
IG
IGSS
Gfss
Gfs
GOSS
GOS
NF
en
en
CISS
CRSS
CHARACTERISTIC²
Gate to Source Breakdown Voltage
Gate to Source Pinch-off Voltage
Gate to Source Operating Voltage
Drain to Source Saturation Current
Gate Operating Current
Gate Operating Current Reduced VDG
Gate to Source Leakage Current
Full Conductance Transconductance
Typical Operation Transconductance
Full Output Conductance
Typical Operation Output Conductance
Noise Figure
MIN
-60
-1
-0.5
1.5
1500
1000
TYP
5
-15
-5
1500
2.0
MAX
-3.5
-3.5
15
-50
-30
-100
40
2.70
UNITS
V
V
V
mA
pA
pA
pA
µS
µS
µS
µS
0.5 dB
CONDITIONS
VDS = 0, ID = 1nA
VDS = 15V, ID = 1nA
VDS = 15V, ID = 500µA
VDS = 15V, VGS = 0
VDG = 15V, ID = 500µA
VDG = 3V, ID = 500µA
VGS = 15V, VDS = 0
VDS = 15V, VGS = 0, f = 1kHz
VDS = 15V, ID = 200µA
VDS = 15V, VGS = 0
VDS = 15V, ID = 200µA
VDS = 15V, VGS = 0, RG = 10MΩ,
f = 100Hz, NBW = 6Hz
Noise Voltage
3
7
nV/√Hz
VDS = 15V, ID = 500µA, f = 1kHz,
NBW = 1Hz
Noise Voltage
Common Source Input Capacitance
Common Source Reverse Transfer Cap.
11
nV/√Hz
VDS = 15V, ID = 500µA, f = 10Hz,
NBW = 1Hz
8
pF
VDS = 15V, ID = 500µA, f = 1MHz
3
pF
Linear Integrated Systems
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Doc 201152 05/20/2014 Rev#A11 ECN# LS846