LS846 Datasheet, PDF (1/1 Pages) Linear Integrated Systems – LOW NOISE, LOW LEAKAGE SINGLE N-CHANNEL JFET

LS846
Linear Integrated Systems
FEATURES
ULTRA LOW NOISE
LOW GATE LEAKAGE
ABSOLUTE MAXIMUM RATINGS¹
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation @ +125 °C
Maximum Currents
Gate Forward Current
Maximum Voltages
Drain to Source
Gate to Source
Gate to Drain
e_n = 3nV/√Hz
I_G = 15pA
-65 to +150 °C
-55 to +135 °C
350mW
I_G(F) = 50mA
V_DSO = 60V
V_GSS = 60V
V_GDS = 60V
LOW NOISE, LOW LEAKAGE
SINGLE N-CHANNEL JFET
*For equivalent monolithic dual, see LS843 family.
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL CHARACTERISTIC
MIN TYP MAX UNITS
BV_GSS
V_GS(OFF)
V_GS
I_DSS
I_G
I_G
I_GSS
Y_fss
Y_fs
Y_oss
Y_os
Gate to Source Breakdown Voltage
60
Gate to Source Pinch-off Voltage
1
3.5
Gate to Source Operating Voltage
0.5
3.5
Drain to Source Saturation Current
1.5 5 15
Gate Operating Current
15 50
Gate Operating Current Reduced V_DG
5 30
Gate to Source Leakage Current
100
Full Conductance Transconductance 1500
Typical Conductance Transconductance 1000 1500
Full Output Conductance
20
Typical Output Conductance
0.2 2
V
V
V
mA
pA
pA
pA
µmho
µmho
µmho
µmho
NF
Noise Figure
0.5 dB
CONDITIONS
V_DS = 0, I_D = 1nA
V_DS = 15V, I_D = 1nA
V_DS = 15V, I_D = 500µA
V_DG = 15V, V_GS = 0
V_DG = 15V, I_D = 500µA
V_DG = 3V, I_D = 500µA
V_DG = 15V, V_DS = 0
V_GD = 15V, V_GS = 0, f = 1kHz
V_DG = 15V, I_D = 500µA
V_DG = 15V, V_GS = 0
V_DG = 15V, I_D = 500µA
V_DS = 15V, V_GS = 0, R_G = 10MΩ,
f = 100Hz, NBW = 6Hz
e_n
Noise Voltage
3
7
nV/√Hz
V_DS = 15V, I_D = 500µA, f = 1kHz,
NBW = 1Hz
e_n
Noise Voltage
11
nV/√Hz
V_DS = 15V, I_D = 500µA, f = 10Hz,
NBW = 1Hz
C_ISS
C_RSS
Common Source Input Capacitance
Common Source Reverse Transfer Cap.
8
pF
V_DS = 15V, I_D = 500µA
3
pF
1. Absolute maximum ratings are limiting values above which serviceability may be impaired.
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