LS843_14 Datasheet, PDF (1/2 Pages) Linear Integrated Systems – ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER

LS843 LS844 LS845
ULTRA LOW NOISE LOW DRIFT
MONOLITHIC DUAL N-CHANNEL
JFET AMPLIFIER
FEATURES
ULTRA LOW NOISE
en=3nV/Hz TYP.
LOW LEAKAGE
IG=15pA TYPs.
LOW DRIFT
I VGS1-2/TI=5µV/ºC max.
ULTRA LOW OFFSET VOLTAGE IVGS1-2I=1mV max.
ABSOLUTE MAXIMUM RATINGS¹
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
-55º to +150°C
Operating Junction Temperature
-55º to +150°C
Maximum Voltage and Current for Each Transistor¹
-VGSS Gate Voltage to Drain or Source 60V
IG(f) Gate Forward Current
Maximum Power Dissipation²
50mA
Device Dissipation² @ Free Air - Total 400mW TA=+25°C
ELECTRICAL CHARACTERISTICS @ 25ºC (unless otherwise noted)
SYMBOL
CHARACTERISTIC
LS843 LS844 LS845 UNITS
I VGS1-2 / TI max. Drift vs. Temperature
5
10 25 µV/ºC
IVGS1-2I max.
Offset Voltage
1
5
15 mV
CONDITIONS
VDG= 10V
TA= -55ºC to +125ºC
VGS= 10V
ID= 500µA
ID= 500µA
SYMBOL
BVGSS
BVGGO
Gfss
Gfs
│Gfs1-2/Gfs1│
IDSS
│IDSS1-2/IDSS│
VGS(off)
VGS
-IG
-IG
-IG
-IGSS
CHARACTERISTIC³
Breakdown Voltage
Gate-to-Gate Breakdown
TRANSCONDUCTANCE
Full Conduction
Typical Conduction
Mismatch
DRAIN CURRENT
Full Conduction
Mismatch at Full Conduction
GATE VOLTAGE
Pinchoff Voltage
Operating Range
GATE CURRENT
Operating
High Temperature
Reduced VDG
At Full Conduction
MIN.
-60
±60
TYP.
--
--
MAX. UNITS
--
V
--
V
CONDITIONS
VDS= 0
ID= -1nA
IGGO= ±1µA ID= 0
IS= 0
1500 --
--
1000 1500 --
--
0.6
3
µS VDS= 15V VGS= 0 f = 1kHz
µS VDS= 15V ID= 500µA
%
1.5
5
15
mA _{VDS= 15V VGS= 0}
--
1
5
%
-1
--
-3.5
V
VDS= 15V ID= 1nA
-0.5
--
-3.5
V
VDS= 15V ID= 500µA
--
15
50
pA VDG= 15V ID= 500µA
--
--
50
nA VDG= 15V ID= 500µA TA=+125ºC
--
5
30
pA VDG= 3V ID= 500µA
--
--
100
pA VGS= 15V VGS= 0
Linear Integrated Systems
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Doc 201144 04/07/2014 Rev#A12 ECN# LS843 LS844 LS845